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NTGS4111PT1G

ON Semiconductor NTGS4111PT1G

Part Number:
NTGS4111PT1G
Manufacturer:
ON Semiconductor
Ventron No:
2484596-NTGS4111PT1G
Description:
MOSFET P-CH 30V 2.6A 6-TSOP
ECAD Model:
Datasheet:
NTGS4111PT1G

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Specifications
ON Semiconductor NTGS4111PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTGS4111PT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 hours ago)
  • Factory Lead Time
    9 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    38MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -4.7A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    6
  • Number of Elements
    1
  • Power Dissipation-Max
    630mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.25W
  • Turn On Delay Time
    9 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 3.7A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    750pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    2.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    32nC @ 10V
  • Rise Time
    9ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    4.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    3.7A
  • Drain to Source Breakdown Voltage
    -30V
  • Height
    1mm
  • Length
    3.1mm
  • Width
    1.7mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTGS4111PT1G Description
NTGS4111PT1G is a type of P-channel power MOSFET provided by ON Semiconductor based on the leading trench process for ultra-low RDS (on). It is able to minimize on-state resistance and provide excellent switching performance. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including battery management and switching, load switching, and more.

NTGS4111PT1G Features
Low RDS (on)
Low gate charge
Advanced switching performance
Available in the TSOP-6 package

NTGS4111PT1G Applications
Load switching
Battery protection
Battery management and switching
NTGS4111PT1G More Descriptions
Trans MOSFET P-CH 30V 3.7A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled
P-Channel 30 V 38 mOhm 1.25 W Surface Mount Power MOSFET - TSOP-6
NTGS4111PT1G P-channel MOSFET Transistor, 4.7 A, 30 V, 6-Pin TSOP | ON Semiconductor NTGS4111PT1G
NTGS4111PT1G Trans MOSFET P-CH 30V 3.7A 6-Pin TSOP T/R RoHS
Single P-Channel Power MOSFET -30V -4.7A 60mΩ
MOSFET, P-CH, -30V, 4.7A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:4.7A; Source Voltage Vds:-30V; On Resistance
MOSFET, P-CH, -30V, 4.7A, TSOP; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.25W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to NTGS4111PT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Reach Compliance Code
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    JESD-30 Code
    DS Breakdown Voltage-Min
    View Compare
  • NTGS4111PT1G
    NTGS4111PT1G
    ON Semiconductor
    ACTIVE (Last Updated: 4 hours ago)
    9 Weeks
    Surface Mount
    SOT-23-6
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    38MOhm
    Tin (Sn)
    Other Transistors
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -4.7A
    40
    6
    1
    630mW Ta
    Single
    ENHANCEMENT MODE
    1.25W
    9 ns
    P-Channel
    SWITCHING
    60m Ω @ 3.7A, 10V
    3V @ 250μA
    750pF @ 15V
    2.6A Ta
    32nC @ 10V
    9ns
    30V
    4.5V 10V
    ±20V
    9 ns
    38 ns
    4.7A
    20V
    3.7A
    -30V
    1mm
    3.1mm
    1.7mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • NTGS3443T1
    NTGS3443T1
    ON Semiconductor
    -
    -
    Surface Mount
    SOT-23-6
    -
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e0
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    Tin/Lead (Sn80Pb20)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    240
    -2A
    30
    6
    1
    500mW Ta
    -
    ENHANCEMENT MODE
    2W
    -
    P-Channel
    SWITCHING
    65m Ω @ 4.4A, 4.5V
    1.5V @ 250μA
    565pF @ 5V
    2.2A Ta
    15nC @ 4.5V
    18ns
    20V
    2.5V 4.5V
    ±12V
    31 ns
    30 ns
    2.2A
    12V
    -
    -20V
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    not_compliant
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    -
    -
    -
    NTGS4111PT1G vs NTGS3443T1
  • NTGS3130NT1G
    NTGS3130NT1G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    13 Weeks
    Surface Mount
    SOT-23-6
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    6
    1
    600mW Ta
    Single
    ENHANCEMENT MODE
    1.1W
    6.3 ns
    N-Channel
    SWITCHING
    24m Ω @ 5.6A, 4.5V
    1.4V @ 250μA
    935pF @ 16V
    4.23A Ta
    20.3nC @ 4.5V
    7.3ns
    -
    2.5V 4.5V
    ±8V
    7.3 ns
    21.7 ns
    5.6A
    8V
    4.2A
    20V
    1mm
    3.1mm
    1.7mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    0.024Ohm
    -
    -
    NTGS4111PT1G vs NTGS3130NT1G
  • NTGS3447PT1G
    NTGS3447PT1G
    ON Semiconductor
    -
    -
    Surface Mount
    SOT-23-6
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    40
    6
    1
    700mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    40m Ω @ 4.7A, 4.5V
    1V @ 250μA
    1.053pF @ 6V
    3.4A Ta
    15nC @ 4.5V
    -
    12V
    1.8V 4.5V
    ±8V
    -
    -
    -
    -
    0.0034A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    0.072Ohm
    R-PDSO-G6
    12V
    NTGS4111PT1G vs NTGS3447PT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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