ON Semiconductor NTD70N03RT4G
- Part Number:
- NTD70N03RT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490578-NTD70N03RT4G
- Description:
- MOSFET N-CH 25V 10A DPAK
- Datasheet:
- NTD70N03RT4G
ON Semiconductor NTD70N03RT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD70N03RT4G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.36W Ta 62.5W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.333pF @ 20V
- Current - Continuous Drain (Id) @ 25°C10A Ta 32A Tc
- Gate Charge (Qg) (Max) @ Vgs13.2nC @ 5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)32A
- Drain-source On Resistance-Max0.013Ohm
- Pulsed Drain Current-Max (IDM)140A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)71.7 mJ
- RoHS StatusROHS3 Compliant
NTD70N03RT4G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 71.7 mJ.A device's maximal input capacitance is 1.333pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 32A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 140A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTD70N03RT4G Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 140A.
a 25V drain to source voltage (Vdss)
NTD70N03RT4G Applications
There are a lot of Rochester Electronics, LLC
NTD70N03RT4G applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 71.7 mJ.A device's maximal input capacitance is 1.333pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 32A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 140A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTD70N03RT4G Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 140A.
a 25V drain to source voltage (Vdss)
NTD70N03RT4G Applications
There are a lot of Rochester Electronics, LLC
NTD70N03RT4G applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NTD70N03RT4G More Descriptions
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 75A 1.87W 1.3ns
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 25V 32A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 25V 75A N-Channel
N CHANNEL MOSFET, 25V, 75A, D-PAK
MOSFET, N-CH, 25V, 72A, TO-252;
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 25V 32A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 25V 75A N-Channel
N CHANNEL MOSFET, 25V, 75A, D-PAK
MOSFET, N-CH, 25V, 72A, TO-252;
The three parts on the right have similar specifications to NTD70N03RT4G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsPublishedVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeView Compare
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NTD70N03RT4GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)2MATTE TINMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.36W Ta 62.5W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 20A, 10V2V @ 250μA1.333pF @ 20V10A Ta 32A Tc13.2nC @ 5V25V4.5V 10V±20V32A0.013Ohm140A25V71.7 mJROHS3 Compliant---------------
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~175°C TJTube--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------1.4W Ta 64W Tc--N-Channel-6m Ω @ 78A, 10V3V @ 250μA2250pF @ 12V11.4A Ta 78A Tc35nC @ 4.5V-4.5V 10V±20V-----Non-RoHS CompliantThrough Hole3200625V78ASingle64W68ns42 ns23 ns78A20V25VContains Lead
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Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLE-NOT SPECIFIED-NOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.4W Ta 64W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6m Ω @ 78A, 10V3V @ 250μA2.25pF @ 12V11.4A Ta 78A Tc35nC @ 4.5V25V4.5V 10V±20V11.4A0.006Ohm210A25V722.5 mJROHS3 Compliant--------------
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Through HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLE-NOT SPECIFIED-NOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.4W Ta 64W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6m Ω @ 78A, 10V3V @ 250μA2.25pF @ 12V11.4A Ta 78A Tc35nC @ 4.5V25V4.5V 10V±20V11.4A0.006Ohm210A25V722.5 mJROHS3 Compliant--------------
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