NTD70N03RT4G

ON Semiconductor NTD70N03RT4G

Part Number:
NTD70N03RT4G
Manufacturer:
ON Semiconductor
Ventron No:
2490578-NTD70N03RT4G
Description:
MOSFET N-CH 25V 10A DPAK
ECAD Model:
Datasheet:
NTD70N03RT4G

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Specifications
ON Semiconductor NTD70N03RT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD70N03RT4G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.36W Ta 62.5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.333pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta 32A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13.2nC @ 5V
  • Drain to Source Voltage (Vdss)
    25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    32A
  • Drain-source On Resistance-Max
    0.013Ohm
  • Pulsed Drain Current-Max (IDM)
    140A
  • DS Breakdown Voltage-Min
    25V
  • Avalanche Energy Rating (Eas)
    71.7 mJ
  • RoHS Status
    ROHS3 Compliant
Description
NTD70N03RT4G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 71.7 mJ.A device's maximal input capacitance is 1.333pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 32A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 140A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NTD70N03RT4G Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 140A.
a 25V drain to source voltage (Vdss)


NTD70N03RT4G Applications
There are a lot of Rochester Electronics, LLC
NTD70N03RT4G applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NTD70N03RT4G More Descriptions
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 75A 1.87W 1.3ns
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 25V 32A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 25V 75A N-Channel
N CHANNEL MOSFET, 25V, 75A, D-PAK
MOSFET, N-CH, 25V, 72A, TO-252;
Product Comparison
The three parts on the right have similar specifications to NTD70N03RT4G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Published
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Lead Free
    View Compare
  • NTD70N03RT4G
    NTD70N03RT4G
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    1.36W Ta 62.5W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    8m Ω @ 20A, 10V
    2V @ 250μA
    1.333pF @ 20V
    10A Ta 32A Tc
    13.2nC @ 5V
    25V
    4.5V 10V
    ±20V
    32A
    0.013Ohm
    140A
    25V
    71.7 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD78N03-001
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.4W Ta 64W Tc
    -
    -
    N-Channel
    -
    6m Ω @ 78A, 10V
    3V @ 250μA
    2250pF @ 12V
    11.4A Ta 78A Tc
    35nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Through Hole
    3
    2006
    25V
    78A
    Single
    64W
    68ns
    42 ns
    23 ns
    78A
    20V
    25V
    Contains Lead
  • NTD78N03-1G
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    1.4W Ta 64W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    6m Ω @ 78A, 10V
    3V @ 250μA
    2.25pF @ 12V
    11.4A Ta 78A Tc
    35nC @ 4.5V
    25V
    4.5V 10V
    ±20V
    11.4A
    0.006Ohm
    210A
    25V
    722.5 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD78N03-35G
    Through Hole
    TO-251-3 Stub Leads, IPak
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSIP-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    1.4W Ta 64W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    6m Ω @ 78A, 10V
    3V @ 250μA
    2.25pF @ 12V
    11.4A Ta 78A Tc
    35nC @ 4.5V
    25V
    4.5V 10V
    ±20V
    11.4A
    0.006Ohm
    210A
    25V
    722.5 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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