ON Semiconductor NTD70N03R
- Part Number:
- NTD70N03R
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2852134-NTD70N03R
- Description:
- MOSFET N-CH 25V 10A DPAK
- ECAD Model:
-
- Datasheet:
- NTD70N03R
ON Semiconductor NTD70N03R technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD70N03R.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTIN LEAD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.36W Ta 62.5W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.333pF @ 20V
- Current - Continuous Drain (Id) @ 25°C10A Ta 32A Tc
- Gate Charge (Qg) (Max) @ Vgs13.2nC @ 5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)32A
- Drain-source On Resistance-Max0.013Ohm
- Pulsed Drain Current-Max (IDM)140A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)71.7 mJ
- RoHS StatusNon-RoHS Compliant
NTD70N03R Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 71.7 mJ.The maximum input capacitance of this device is 1.333pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 32A.There is no pulsed drain current maximum for this device based on its rated peak drain current 140A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTD70N03R Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 140A.
a 25V drain to source voltage (Vdss)
NTD70N03R Applications
There are a lot of Rochester Electronics, LLC
NTD70N03R applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 71.7 mJ.The maximum input capacitance of this device is 1.333pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 32A.There is no pulsed drain current maximum for this device based on its rated peak drain current 140A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTD70N03R Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 140A.
a 25V drain to source voltage (Vdss)
NTD70N03R Applications
There are a lot of Rochester Electronics, LLC
NTD70N03R applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NTD70N03R More Descriptions
Tube Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 32A 1.87W 1.3ns
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
MOSFETs- Power and Small Signal 25V 75A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
MOSFETs- Power and Small Signal 25V 75A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to NTD70N03R.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsPublishedVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeView Compare
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NTD70N03RSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTubee0noObsolete1 (Unlimited)2TIN LEADMOSFET (Metal Oxide)SINGLEGULL WING240unknown303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.36W Ta 62.5W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 20A, 10V2V @ 250μA1.333pF @ 20V10A Ta 32A Tc13.2nC @ 5V25V4.5V 10V±20V32A0.013Ohm140A25V71.7 mJNon-RoHS Compliant--------------- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AAYESSILICON-55°C~175°C TJTubee0noObsolete1 (Unlimited)2TIN LEADMOSFET (Metal Oxide)SINGLEGULL WING240-303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.36W Ta 62.5W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 20A, 10V2V @ 250μA1.333pF @ 20V10A Ta 32A Tc13.2nC @ 5V25V4.5V 10V±20V32A0.013Ohm140A25V71.7 mJNon-RoHS Compliant--------------
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Through HoleTO-251-3 Stub Leads, IPak---55°C~175°C TJTube--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----------1.4W Ta 64W Tc--N-Channel-6m Ω @ 78A, 10V3V @ 250μA2250pF @ 12V11.4A Ta 78A Tc35nC @ 4.5V-4.5V 10V±20V-----Non-RoHS CompliantThrough Hole3200625V78ASingle64W68ns42 ns23 ns78A20V25VContains Lead
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Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLE-NOT SPECIFIED-NOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.4W Ta 64W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6m Ω @ 78A, 10V3V @ 250μA2.25pF @ 12V11.4A Ta 78A Tc35nC @ 4.5V25V4.5V 10V±20V11.4A0.006Ohm210A25V722.5 mJROHS3 Compliant--------------
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