ON Semiconductor NTD20P06L-001
- Part Number:
- NTD20P06L-001
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2488908-NTD20P06L-001
- Description:
- MOSFET P-CH 60V 15.5A IPAK
- Datasheet:
- NTD20P06L-001
ON Semiconductor NTD20P06L-001 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20P06L-001.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-15A
- Power Dissipation-Max65W Tc
- Element ConfigurationSingle
- Power Dissipation65W
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs150m Ω @ 7.5A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1190pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15.5A Ta
- Gate Charge (Qg) (Max) @ Vgs26nC @ 5V
- Rise Time90ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±20V
- Fall Time (Typ)70 ns
- Turn-Off Delay Time28 ns
- Continuous Drain Current (ID)15.5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTD20P06L-001 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1190pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V), this device helps reduce its overall power consumption.
NTD20P06L-001 Features
a continuous drain current (ID) of 15.5A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 28 ns
a 60V drain to source voltage (Vdss)
NTD20P06L-001 Applications
There are a lot of ON Semiconductor
NTD20P06L-001 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1190pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 15.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 28 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V), this device helps reduce its overall power consumption.
NTD20P06L-001 Features
a continuous drain current (ID) of 15.5A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 28 ns
a 60V drain to source voltage (Vdss)
NTD20P06L-001 Applications
There are a lot of ON Semiconductor
NTD20P06L-001 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
NTD20P06L-001 More Descriptions
MOSFETs- Power and Small Signal -60V -15.5A No-Cancel/No-Return
MOSFET P-CH 60V 15.5A IPAK
MOSFET P-CH 60V 15.5A IPAK
The three parts on the right have similar specifications to NTD20P06L-001.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusLead FreeLifecycle StatusFactory Lead TimeContact PlatingSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsOperating ModeCase ConnectionTurn On Delay TimeTransistor ApplicationThreshold VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningTerminal FinishDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxAdditional FeatureQualification StatusAvalanche Energy Rating (Eas)View Compare
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NTD20P06L-001Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3-55°C~175°C TJTube2005Obsolete1 (Unlimited)-60VMOSFET (Metal Oxide)-15A65W TcSingle65WP-Channel150m Ω @ 7.5A, 5V2V @ 250μA1190pF @ 25V15.5A Ta26nC @ 5V90ns60V5V±20V70 ns28 ns15.5A20V-60VNon-RoHS CompliantContains Lead------------------------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTape & Reel (TR)2005Active1 (Unlimited)60VMOSFET (Metal Oxide)20A1.36W Ta 60W TjSingle60WN-Channel48m Ω @ 10A, 5V2V @ 250μA990pF @ 25V20A Ta32nC @ 5V98ns-5V±15V62 ns25 ns20A15V60VROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)8 WeeksTinYESSILICONe3yes2EAR9937.5MOhmFET General Purpose PowerGULL WING260403R-PSSO-G21ENHANCEMENT MODEDRAIN9.6 nsSWITCHING1.6V60A1.6 V2.2606mm6.7056mm6.223mmNo SVHCNo------
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-Through HoleTO-251-3 Short Leads, IPak, TO-251AA4-55°C~175°C TJTube2005Obsolete1 (Unlimited)-60VMOSFET (Metal Oxide)-15.5A65W TcSingle65WP-Channel150m Ω @ 7.5A, 5V2V @ 250μA1190pF @ 25V15.5A Ta26nC @ 5V90ns60V5V±20V70 ns28 ns15.5A20V-60VRoHS CompliantLead FreeLAST SHIPMENTS (Last Updated: 3 days ago)--NOSILICONe3yes3EAR99-Other Transistors---4R-PSIP-T31ENHANCEMENT MODEDRAIN11 nsSWITCHING-50A-----NoTin (Sn)15A0.15Ohm---
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~150°C TJTape & Reel (TR)2006Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-75W TjSingle75WP-Channel80m Ω @ 25A, 5V2V @ 250μA1260pF @ 25V25A Ta20nC @ 5V37ns30V4V 5V±15V16 ns15 ns25A15V-30VRoHS CompliantLead FreeLAST SHIPMENTS (Last Updated: 1 week ago)--YESSILICONe3yes2--Other TransistorsGULL WING260403R-PSSO-G21ENHANCEMENT MODEDRAIN-SWITCHING-75A------Tin (Sn)-0.08OhmLOGIC LEVEL COMPATIBLENot Qualified200 mJ
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