ON Semiconductor NTD20N06L-001
- Part Number:
- NTD20N06L-001
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2488994-NTD20N06L-001
- Description:
- MOSFET N-CH 60V 20A IPAK
- Datasheet:
- NTD20N06L-001
ON Semiconductor NTD20N06L-001 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20N06L-001.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device PackageI-PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.36W Ta 60W Tj
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs48mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds990pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Ta
- Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±15V
- RoHS StatusNon-RoHS Compliant
NTD20N06L-001 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 990pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (5V) reduces this device's overall power consumption.
NTD20N06L-001 Features
a 60V drain to source voltage (Vdss)
NTD20N06L-001 Applications
There are a lot of Rochester Electronics, LLC
NTD20N06L-001 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 990pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (5V) reduces this device's overall power consumption.
NTD20N06L-001 Features
a 60V drain to source voltage (Vdss)
NTD20N06L-001 Applications
There are a lot of Rochester Electronics, LLC
NTD20N06L-001 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
NTD20N06L-001 More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 20A Ta 20A 60W 62ns
Trans MOSFET N-CH 60V 20A 3-Pin (3 Tab) DPAK Rail
MOSFETs- Power and Small Signal 60V 20A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTD20N06L-001, SINGLE MOSFETS;
Trans MOSFET N-CH 60V 20A 3-Pin (3 Tab) DPAK Rail
MOSFETs- Power and Small Signal 60V 20A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTD20N06L-001, SINGLE MOSFETS;
The three parts on the right have similar specifications to NTD20N06L-001.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountPublishedVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeLifecycle StatusNumber of PinsECCN CodeSubcategoryTurn On Delay TimeRadiation HardeningView Compare
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NTD20N06L-001Through HoleTO-251-3 Short Leads, IPak, TO-251AAI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.36W Ta 60W TjN-Channel48mOhm @ 10A, 5V2V @ 250μA990pF @ 25V20A Ta32nC @ 5V60V5V±15VNon-RoHS Compliant---------------------------------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)75W TjP-Channel80m Ω @ 25A, 5V2V @ 250μA1.26pF @ 25V25A Ta20nC @ 5V30V4V 5V±15VNon-RoHS CompliantYESSILICONe0no2TIN LEADLOGIC LEVEL COMPATIBLESINGLEGULL WING240unknown303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING25A0.08Ohm75A30V200 mJ-------------------
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.36W Ta 62.5W TjN-Channel42m Ω @ 10A, 10V4V @ 250μA1200pF @ 25V24A Ta48nC @ 10V-10V±20VNon-RoHS Compliant-------------------------Through Hole200960V24ASingle62.5W24ns27 ns25 ns24A20V60VContains Lead------
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)65W TcP-Channel150m Ω @ 7.5A, 5V2V @ 250μA1190pF @ 25V15.5A Ta26nC @ 5V60V5V±20VRoHS CompliantNOSILICONe3yes3Tin (Sn)------4R-PSIP-T3-1-ENHANCEMENT MODEDRAINSWITCHING15A0.15Ohm50A---2005-60V-15.5ASingle65W90ns70 ns28 ns15.5A20V-60VLead FreeLAST SHIPMENTS (Last Updated: 3 days ago)4EAR99Other Transistors11 nsNo
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