ON Semiconductor NTB5426NT4G
- Part Number:
- NTB5426NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3586691-NTB5426NT4G
- Description:
- MOSFET N-CH 60V 120A D2PAK
- ECAD Model:
-
- Datasheet:
- NTB5426NT4G
ON Semiconductor NTB5426NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB5426NT4G.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max215W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5.8pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTB5426NT4G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5.8pF @ 25V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NTB5426NT4G Features
a 60V drain to source voltage (Vdss)
NTB5426NT4G Applications
There are a lot of Rochester Electronics, LLC
NTB5426NT4G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5.8pF @ 25V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NTB5426NT4G Features
a 60V drain to source voltage (Vdss)
NTB5426NT4G Applications
There are a lot of Rochester Electronics, LLC
NTB5426NT4G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
NTB5426NT4G More Descriptions
Power MOSFET 60V 120A 6 mOhm Single N-Channel D2PAK
NTB5426NT4G N-channel MOSFET Transistor, 120 A, 60 V, 3-Pin D2PAK | ON Semiconductor NTB5426NT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 120A Tc 130A 215W 95ns
Trans MOSFET N-CH 60V 120A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
NTB5426NT4G N-channel MOSFET Transistor, 120 A, 60 V, 3-Pin D2PAK | ON Semiconductor NTB5426NT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 120A Tc 130A 215W 95ns
Trans MOSFET N-CH 60V 120A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
The three parts on the right have similar specifications to NTB5426NT4G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Lead FreeLifecycle StatusPbfree CodeAvalanche Energy Rating (Eas)Surface MountAdditional FeatureTerminal PositionConfigurationDS Breakdown Voltage-MinView Compare
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NTB5426NT4GSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)215W TcN-Channel6mOhm @ 60A, 10V4V @ 250μA5.8pF @ 25V120A Tc170nC @ 10V60V10V±20VROHS3 Compliant------------------------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)88W TcP-Channel140m Ω @ 8.5A, 5V2V @ 250μA1190pF @ 25V18.5A Ta22nC @ 5V60V5V±20VNon-RoHS CompliantSurface Mount3SILICON2008e02EAR99Tin/Lead (Sn/Pb)Other Transistors-60VGULL WING235not_compliant-18.5ANOT SPECIFIED3R-PSSO-G2Not Qualified1SingleENHANCEMENT MODE88WDRAINSWITCHING122ns75 ns29 ns18.5A20V17A0.14Ohm-60V55AContains Lead--------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)166W TcN-Channel10m Ω @ 40A, 10V4V @ 250μA4500pF @ 25V80A Tc130nC @ 10V-10V±20VRoHS CompliantSurface Mount3SILICON2008e32EAR99Tin (Sn)FET General Purpose Power-GULL WINGNOT SPECIFIED--NOT SPECIFIED3R-PSSO-G2Not Qualified1SingleENHANCEMENT MODE166WDRAINSWITCHING122ns113 ns116 ns80A20V--60V-Lead FreeLAST SHIPMENTS (Last Updated: 1 day ago)yes280 mJ-----
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)125W TcN-Channel14m Ω @ 30A, 10V4V @ 250μA3.22pF @ 25V60A Tc-60V10V±20VROHS3 Compliant--SILICON-e32-MATTE TIN--GULL WINGNOT SPECIFIEDunknown-NOT SPECIFIED3R-PSSO-G2COMMERCIAL1-ENHANCEMENT MODE-DRAINSWITCHING-----60A0.014Ohm-155A--yes180 mJYESAVALANCHE RATEDSINGLESINGLE WITH BUILT-IN DIODE60V
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