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NTB52N10T4G

ON Semiconductor NTB52N10T4G

Part Number:
NTB52N10T4G
Manufacturer:
ON Semiconductor
Ventron No:
2490699-NTB52N10T4G
Description:
MOSFET N-CH 100V 52A D2PAK
ECAD Model:
Datasheet:
NTB52N10T4G

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Specifications
ON Semiconductor NTB52N10T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB52N10T4G.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 6 days ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    52A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    2W Ta 178W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    178W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 26A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3150pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    52A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    135nC @ 10V
  • Rise Time
    95ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    100 ns
  • Turn-Off Delay Time
    74 ns
  • Continuous Drain Current (ID)
    52A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Avalanche Energy Rating (Eas)
    800 mJ
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
NTB52N10T4G Description
NTB52N10T4G is a D2PAK NChannel EnhancementMode.

NTB52N10T4G Features
? Recovery Time of a Source-to-Drain Diode Is Comparable to a Discrete Fast Recovery Diode
? Specified Avalanche Energy
? At Elevated Temperatures, IDSS and RDS(on) are Specified
? The D2PAK Package comes with mounting instructions.
? Packages without pb are available

NTB52N10T4G Applications
? Controls for PWM Motors
? Power Sources
? Converting devices
NTB52N10T4G More Descriptions
Power MOSFET 100V 52A 30 mOhm Single N-Channel D2PAK
Trans MOSFET N-CH 100V 52A 3-Pin (2 Tab) D2PAK T/R
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:52A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.92V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to NTB52N10T4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Surface Mount
    Turn On Delay Time
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    Drain to Source Voltage (Vdss)
    View Compare
  • NTB52N10T4G
    NTB52N10T4G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 6 days ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    52A
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    2W Ta 178W Tc
    Single
    ENHANCEMENT MODE
    178W
    DRAIN
    N-Channel
    SWITCHING
    30m Ω @ 26A, 10V
    4V @ 250μA
    3150pF @ 25V
    52A Tc
    135nC @ 10V
    95ns
    10V
    ±20V
    100 ns
    74 ns
    52A
    20V
    100V
    800 mJ
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • NTB52N10G
    NTB52N10G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2002
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    52A
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    2W Ta 178W Tc
    Single
    ENHANCEMENT MODE
    178W
    DRAIN
    N-Channel
    SWITCHING
    30m Ω @ 26A, 10V
    4V @ 250μA
    3150pF @ 25V
    52A Tc
    135nC @ 10V
    95ns
    10V
    ±20V
    100 ns
    74 ns
    52A
    20V
    100V
    800 mJ
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    NTB52N10T4G vs NTB52N10G
  • NTB5404NT4G
    NTB5404NT4G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 5 days ago)
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    -
    -
    3
    R-PSSO-G2
    -
    1
    5.4W Ta 254W Tc
    Single
    ENHANCEMENT MODE
    167W
    DRAIN
    N-Channel
    SWITCHING
    4.5m Ω @ 40A, 10V
    4V @ 250μA
    7000pF @ 32V
    167A Tc
    125nC @ 10V
    65ns
    5V 10V
    ±20V
    85 ns
    85 ns
    136A
    20V
    40V
    -
    RoHS Compliant
    Lead Free
    YES
    10 ns
    0.0045Ohm
    258A
    No
    -
    NTB52N10T4G vs NTB5404NT4G
  • NTB5605T4G
    NTB5605T4G
    ON Semiconductor
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2010
    e3
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    Other Transistors
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    88W Tc
    Single
    ENHANCEMENT MODE
    88W
    DRAIN
    P-Channel
    SWITCHING
    140m Ω @ 8.5A, 5V
    2V @ 250μA
    1190pF @ 25V
    18.5A Ta
    22nC @ 5V
    122ns
    5V
    ±20V
    75 ns
    29 ns
    18.5A
    20V
    -60V
    -
    RoHS Compliant
    -
    -
    -
    -
    55A
    -
    60V
    NTB52N10T4G vs NTB5605T4G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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