ON Semiconductor NTB35N15T4G

Name: NTB35N15T4G
Brand: ON Semiconductor
SKU: 2480347-NTB35N15T4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTB35N15T4G

Manufacturer:: ON Semiconductor

Ventron No:: 2480347-NTB35N15T4G

Description:: MOSFET N-CH 150V 37A D2PAK

ECAD Model:

Datasheet:: NTB35N15T4G

Specifications

ON Semiconductor NTB35N15T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTB35N15T4G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
37A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
2W Ta 178W Tj
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
178W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
37A Ta
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
125ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
120 ns
Turn-Off Delay Time
90 ns
Continuous Drain Current (ID)
37A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.05Ohm
Drain to Source Breakdown Voltage
150V
Avalanche Energy Rating (Eas)
700 mJ
Nominal Vgs
2.9 V
Height
4.83mm
Length
9.65mm
Width
10.29mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTB35N15T4G Description
NTB35N15T4G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 150V. The operating temperature of the NTB35N15T4G is -55°C~150°C TJ and its maximum power dissipation is 178W. NTB35N15T4G has 3 pins and it is available in Tape & Reel (TR) packaging way.

NTB35N15T4G Features
Source?to?Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
Mounting Information Provided for the D2PAK Package
Pb?Free Packages are Available

NTB35N15T4G Applications
PWM Motor Controls
Power Supplies
Converters

NTB35N15T4G More Descriptions

N-Channel 150 V 50 mOhm 178 W Surface Mount Power MOSFET - D2PAK-3
NTB35N15T4G N-channel MOSFET Transistor, 37 A, 150 V, 4-Pin D2PAK | ON Semiconductor NTB35N15T4G
Single N-Channel Power MOSFET 150V, 37A, 50 mΩ
Trans MOSFET N-CH 150V 37A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Mosfet, N-Ch, 150V, 37A, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power Rohs Compliant: Yes |Onsemi NTB35N15T4G..

Product Comparison

The three parts on the right have similar specifications to NTB35N15T4G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Additional Feature

Terminal Position

Reach Compliance Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Mount

HTS Code

View Compare
NTB35N15T4G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

FET General Purpose Power

150V

MOSFET (Metal Oxide)

GULL WING

260

37A

40

3

R-PSSO-G2

1

2W Ta 178W Tj

Single

ENHANCEMENT MODE

178W

DRAIN

20 ns

N-Channel

SWITCHING

50m Ω @ 18.5A, 10V

4V @ 250μA

3200pF @ 25V

37A Ta

100nC @ 10V

125ns

10V

±20V

120 ns

90 ns

37A

20V

0.05Ohm

150V

700 mJ

2.9 V

4.83mm

9.65mm

10.29mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
NTB30N20T4G

ON Semiconductor

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

2

-

-

-

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSSO-G2

1

2W Ta 214W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

81m Ω @ 15A, 10V

4V @ 250μA

2.335pF @ 25V

30A Ta

100nC @ 10V

-

10V

±30V

-

-

-

-

0.081Ohm

-

450 mJ

-

-

-

-

-

ROHS3 Compliant

-

MATTE TIN

AVALANCHE RATED

SINGLE

unknown

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

200V

30A

90A

200V

-

-

NTB35N15T4G vs NTB30N20T4G
NTB30N06LT4

ON Semiconductor

OBSOLETE (Last Updated: 4 days ago)

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2006

e0

no

Obsolete

1 (Unlimited)

2

-

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

240

30A

30

3

R-PSSO-G2

1

88.2W Tc

Single

ENHANCEMENT MODE

88.2W

DRAIN

-

N-Channel

SWITCHING

46m Ω @ 15A, 5V

2V @ 250μA

1150pF @ 25V

30A Ta

32nC @ 5V

200ns

5V

±15V

62 ns

15.6 ns

30A

15V

0.046Ohm

60V

101 mJ

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn80Pb20)

-

-

not_compliant

Not Qualified

-

-

-

90A

-

Surface Mount

8541.29.00.95

NTB35N15T4G vs NTB30N06LT4
NTB30N06LT4G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 4 days ago)

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2005

e3

yes

Obsolete

1 (Unlimited)

2

-

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

30A

NOT SPECIFIED

3

R-PSSO-G2

1

88.2W Tc

Single

ENHANCEMENT MODE

88.2W

DRAIN

-

N-Channel

SWITCHING

46m Ω @ 15A, 5V

2V @ 250μA

1150pF @ 25V

30A Ta

32nC @ 5V

200ns

5V

±15V

62 ns

15.6 ns

30A

15V

0.046Ohm

60V

-

-

-

-

-

-

RoHS Compliant

Lead Free

Tin (Sn)

-

-

-

Not Qualified

-

-

-

90A

-

Surface Mount

-

NTB35N15T4G vs NTB30N06LT4G