ON Semiconductor NTB30N06T4G

NTB30N06T4G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 101 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 80A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

NTB30N06T4G Features
the avalanche energy rating (Eas) is 101 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 24 ns
based on its rated peak drain current 80A.


NTB30N06T4G Applications
There are a lot of ON Semiconductor
NTB30N06T4G applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.