Renesas Electronics America NP90N03VLG-E1-AY
- Part Number:
- NP90N03VLG-E1-AY
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 3586852-NP90N03VLG-E1-AY
- Description:
- MOSFET N-CH 30V 90A TO-252
- Datasheet:
- NP90N03VLG-E1-AY
Renesas Electronics America NP90N03VLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America NP90N03VLG-E1-AY.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature175°C TJ
- PackagingTape & Reel (TR)
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.2W Ta 105W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.2m Ω @ 45A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C90A Tc
- Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time73 ns
- Continuous Drain Current (ID)90A
- Gate to Source Voltage (Vgs)20V
- RoHS StatusROHS3 Compliant
NP90N03VLG-E1-AY Overview
A device's maximal input capacitance is 7500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 90A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 73 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NP90N03VLG-E1-AY Features
a continuous drain current (ID) of 90A
the turn-off delay time is 73 ns
a 30V drain to source voltage (Vdss)
NP90N03VLG-E1-AY Applications
There are a lot of Renesas Electronics America
NP90N03VLG-E1-AY applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 7500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 90A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 73 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NP90N03VLG-E1-AY Features
a continuous drain current (ID) of 90A
the turn-off delay time is 73 ns
a 30V drain to source voltage (Vdss)
NP90N03VLG-E1-AY Applications
There are a lot of Renesas Electronics America
NP90N03VLG-E1-AY applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NP90N03VLG-E1-AY More Descriptions
Trans MOSFET N-CH 30V 90A 3-Pin(2 Tab) TO-252 T/R
MOSFET Single MOSFET, Pch SC-95/SOT-6
Power MOSFETs for Automotive
MOSFET Single MOSFET, Pch SC-95/SOT-6
Power MOSFETs for Automotive
The three parts on the right have similar specifications to NP90N03VLG-E1-AY.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)RoHS StatusSubcategoryJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRadiation HardeningFactory Lead TimeView Compare
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NP90N03VLG-E1-AYSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON175°C TJTape & Reel (TR)2010Obsolete1 (Unlimited)2EAR998541.29.00.95MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE1.2W Ta 105W TcENHANCEMENT MODEDRAIN17 nsN-ChannelSWITCHING3.2m Ω @ 45A, 10V2.5V @ 250μA7500pF @ 25V90A Tc135nC @ 10V13ns30V4.5V 10V±20V9 ns73 ns90A20VROHS3 Compliant--------
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Through HoleThrough HoleTO-220-3-SILICON175°C TJTube2007Obsolete1 (Unlimited)3EAR998541.29.00.95MOSFET (Metal Oxide)SINGLE---3R-PSFM-T3-1SINGLE WITH BUILT-IN DIODE1.8W Ta 217W TcENHANCEMENT MODEDRAIN42 nsN-ChannelSWITCHING3m Ω @ 45A, 10V4V @ 250μA11200pF @ 25V90A Tc182nC @ 10V12ns40V10V±20V17 ns92 ns90A20VROHS3 CompliantFET General Purpose PowerTO-220AB0.003Ohm360A40VNo-
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Through HoleThrough HoleTO-262-3 Full Pack, I2Pak3-175°C TJTube2011Active1 (Unlimited)-EAR99-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED3---Single1.8W Ta 176W Tc---N-Channel-2.8m Ω @ 45A, 10V4V @ 250μA7050pF @ 25V90A Tc120nC @ 10V-40V10V±20V--90A-ROHS3 CompliantFET General Purpose Powers-----16 Weeks
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Through HoleThrough HoleTO-220-3 Full Pack3-175°C TJTube2011Active1 (Unlimited)-EAR99-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED3---Single1.8W Ta 176W Tc---N-Channel-2.8m Ω @ 45A, 10V4V @ 250μA7050pF @ 25V90A Tc120nC @ 10V-40V10V±20V--90A-ROHS3 CompliantFET General Purpose Powers-----16 Weeks
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