NP90N03VLG-E1-AY

Renesas Electronics America NP90N03VLG-E1-AY

Part Number:
NP90N03VLG-E1-AY
Manufacturer:
Renesas Electronics America
Ventron No:
3586852-NP90N03VLG-E1-AY
Description:
MOSFET N-CH 30V 90A TO-252
ECAD Model:
Datasheet:
NP90N03VLG-E1-AY

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Specifications
Renesas Electronics America NP90N03VLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America NP90N03VLG-E1-AY.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • HTS Code
    8541.29.00.95
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.2W Ta 105W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.2m Ω @ 45A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    90A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    135nC @ 10V
  • Rise Time
    13ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    73 ns
  • Continuous Drain Current (ID)
    90A
  • Gate to Source Voltage (Vgs)
    20V
  • RoHS Status
    ROHS3 Compliant
Description
NP90N03VLG-E1-AY Overview
A device's maximal input capacitance is 7500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 90A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 73 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NP90N03VLG-E1-AY Features
a continuous drain current (ID) of 90A
the turn-off delay time is 73 ns
a 30V drain to source voltage (Vdss)


NP90N03VLG-E1-AY Applications
There are a lot of Renesas Electronics America
NP90N03VLG-E1-AY applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
NP90N03VLG-E1-AY More Descriptions
Trans MOSFET N-CH 30V 90A 3-Pin(2 Tab) TO-252 T/R
MOSFET Single MOSFET, Pch SC-95/SOT-6
Power MOSFETs for Automotive
Product Comparison
The three parts on the right have similar specifications to NP90N03VLG-E1-AY.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    HTS Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    RoHS Status
    Subcategory
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Radiation Hardening
    Factory Lead Time
    View Compare
  • NP90N03VLG-E1-AY
    NP90N03VLG-E1-AY
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    175°C TJ
    Tape & Reel (TR)
    2010
    Obsolete
    1 (Unlimited)
    2
    EAR99
    8541.29.00.95
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    1.2W Ta 105W Tc
    ENHANCEMENT MODE
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    3.2m Ω @ 45A, 10V
    2.5V @ 250μA
    7500pF @ 25V
    90A Tc
    135nC @ 10V
    13ns
    30V
    4.5V 10V
    ±20V
    9 ns
    73 ns
    90A
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • NP90N04MUG-S18-AY
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    175°C TJ
    Tube
    2007
    Obsolete
    1 (Unlimited)
    3
    EAR99
    8541.29.00.95
    MOSFET (Metal Oxide)
    SINGLE
    -
    -
    -
    3
    R-PSFM-T3
    -
    1
    SINGLE WITH BUILT-IN DIODE
    1.8W Ta 217W Tc
    ENHANCEMENT MODE
    DRAIN
    42 ns
    N-Channel
    SWITCHING
    3m Ω @ 45A, 10V
    4V @ 250μA
    11200pF @ 25V
    90A Tc
    182nC @ 10V
    12ns
    40V
    10V
    ±20V
    17 ns
    92 ns
    90A
    20V
    ROHS3 Compliant
    FET General Purpose Power
    TO-220AB
    0.003Ohm
    360A
    40V
    No
    -
  • NP90N04NUK-S18-AY
    Through Hole
    Through Hole
    TO-262-3 Full Pack, I2Pak
    3
    -
    175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    -
    -
    Single
    1.8W Ta 176W Tc
    -
    -
    -
    N-Channel
    -
    2.8m Ω @ 45A, 10V
    4V @ 250μA
    7050pF @ 25V
    90A Tc
    120nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    90A
    -
    ROHS3 Compliant
    FET General Purpose Powers
    -
    -
    -
    -
    -
    16 Weeks
  • NP90N04MUK-S18-AY
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    175°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    -
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    -
    -
    Single
    1.8W Ta 176W Tc
    -
    -
    -
    N-Channel
    -
    2.8m Ω @ 45A, 10V
    4V @ 250μA
    7050pF @ 25V
    90A Tc
    120nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    90A
    -
    ROHS3 Compliant
    FET General Purpose Powers
    -
    -
    -
    -
    -
    16 Weeks
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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