ON Semiconductor NGTB30N120L2WG

Name: NGTB30N120L2WG
Brand: ON Semiconductor
SKU: 3587284-NGTB30N120L2WG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NGTB30N120L2WG

Manufacturer:: ON Semiconductor

Ventron No:: 3587284-NGTB30N120L2WG

Description:: IGBT 1200V 60A 534W TO247

ECAD Model:

Datasheet:: NGTB30N120L2WG

Specifications

ON Semiconductor NGTB30N120L2WG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NGTB30N120L2WG.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Factory Lead Time
26 Weeks
Mount
Through Hole
Package / Case
TO-247
Number of Pins
3
Weight
6.500007g
Packaging
Tube
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
534W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
60A
Reverse Recovery Time
450 ns
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
1.7V
Height
21.4mm
Length
16.25mm
Width
5.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NGTB30N120L2WG Description
NGTB30N120L2WG developed by ON Semiconductor is a type of IGBT with Field Stop II Trench construction. It is able to deliver low on state voltage and minimal switching loss for demanding switching applications. Based on its specific characteristics, the NGTB30N120L2WG IGBT is well suited for a wide range of applications, including motor drive inverters, industrial switching, welding, and more.

NGTB30N120L2WG Features
10 us short?circuit capability Low on state voltage Minimal switching loss Field Stop II Trench construction TJmax = 175°C

NGTB30N120L2WG Applications
Motor drive inverters Industrial switching Welding

NGTB30N120L2WG More Descriptions

Trans IGBT Chip N-CH 1200V 60A 468000mW 3-Pin(3 Tab) TO-247 Tube
IGBT, 1200V 30A FS2 Low VCEsat
IGBT Transistors 1200V/30A LOW VCE SAT FSII
TRANSISTOR, IGBT, 1.7V, 60A, TO-247-3;
RES SMD 1.91M OHM 1% 1/8W 0805
Insulated Gate Bipolar Transistor

Product Comparison

The three parts on the right have similar specifications to NGTB30N120L2WG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Package / Case

Number of Pins

Weight

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Element Configuration

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Mounting Type

Surface Mount

Operating Temperature

Subcategory

Pin Count

Input Type

Power - Max

Halogen Free

Polarity/Channel Type

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Supplier Device Package

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
NGTB30N120L2WG

ON Semiconductor

LAST SHIPMENTS (Last Updated: 6 days ago)

26 Weeks

Through Hole

TO-247

3

6.500007g

Tube

2012

e3

yes

Obsolete

1 (Unlimited)

EAR99

Tin (Sn)

175°C

-55°C

534W

NOT SPECIFIED

NOT SPECIFIED

Single

1.2kV

60A

450 ns

1.2kV

1.7V

21.4mm

16.25mm

5.3mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NGTB40N60FLWG

ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

5 Weeks

-

TO-247-3

3

6.500007g

Tube

2013

e3

yes

Obsolete

1 (Unlimited)

EAR99

Tin (Sn)

-

-

257W

-

-

Single

600V

80A

77 ns

600V

1.85V

21.4mm

16.25mm

5.3mm

No SVHC

RoHS Compliant

Lead Free

Through Hole

NO

-55°C~150°C TJ

Insulated Gate BIP Transistors

3

Standard

257W

Halogen Free

N-CHANNEL

400V, 40A, 10 Ω, 15V

2.1V @ 15V, 40A

Trench Field Stop

171nC

160A

85ns/174ns

890μJ (on), 440μJ (off)

20V

6.5V

-

-

-

NGTB30N120L2WG vs NGTB40N60FLWG
NGTB40N60L2WG

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

4 Weeks

Through Hole

TO-247-3

3

38.000013g

Tube

2011

-

yes

Active

1 (Unlimited)

-

-

-

-

417W

-

-

Single

600V

80A

73 ns

600V

2V

21.08mm

16.26mm

5.3mm

No SVHC

ROHS3 Compliant

Lead Free

Through Hole

-

-55°C~175°C TJ

-

-

Standard

417W

-

-

400V, 40A, 10 Ω, 15V

2.61V @ 15V, 40A

Trench Field Stop

228nC

160A

98ns/213ns

1.17mJ (on), 280μJ (off)

-

-

-

-

-

NGTB30N120L2WG vs NGTB40N60L2WG
NGTB30N120LWG

ON Semiconductor

-

-

-

TO-247-3

-

-

Tube

-

-

-

Obsolete

3 (168 Hours)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Through Hole

-

-55°C~150°C TJ

-

-

Standard

560W

-

-

600V, 30A, 10Ohm, 15V

2.2V @ 15V, 30A

Trench Field Stop

420nC

240A

136ns/360ns

4.4mJ (on), 1mJ (off)

-

-

TO-247

1.2V

60A

NGTB30N120L2WG vs NGTB30N120LWG