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NGTB25N120FL2WG

ON Semiconductor NGTB25N120FL2WG

Part Number:
NGTB25N120FL2WG
Manufacturer:
ON Semiconductor
Ventron No:
2497032-NGTB25N120FL2WG
Description:
IGBT 1200V 25A TO247-3
ECAD Model:
Datasheet:
NGTB25N120FL2WG

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Specifications
ON Semiconductor NGTB25N120FL2WG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NGTB25N120FL2WG.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    33 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    385W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    385W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Max Collector Current
    50A
  • Reverse Recovery Time
    154 ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Test Condition
    600V, 25A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 25A
  • IGBT Type
    Field Stop
  • Gate Charge
    178nC
  • Current - Collector Pulsed (Icm)
    100A
  • Td (on/off) @ 25°C
    87ns/179ns
  • Switching Energy
    1.95mJ (on), 600μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NGTB25N120FL2WG Description
The Field Stop II Trench architecture of this Insulated Gate Bipolar Transistor (IGBT) ensures exceptional performance in demanding switching applications, with low on-state voltage and little switching loss. The IGBT is ideal for solar and UPS applications. A soft and quick copackaged free wheeling diode with a low forward voltage is included in the device.

NGTB25N120FL2WG Features

? Field Stop Technology for Extremely Efficient Trenching
? Maximum TJ = 175°C
? Diode with a Soft Fast Reverse Recovery
? High-speed switching optimized
? Short-circuit capability of 10 seconds
? These devices are free of lead.

NGTB25N120FL2WG Applications

? Inverter solar
? UPS (Uninterruptible Power Supply) (UPS)
? Tack welding

NGTB25N120FL2WG More Descriptions
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3 Tab) TO-247 Tube
1200V/25 Fast Igbt Fsii To-247/Tube |Onsemi NGTB25N120FL2WG
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
IGBT FIELD STOP 1200V 50A TO247
385W 50A 1200V Field Stop TO-247 IGBTs ROHS
Product Comparison
The three parts on the right have similar specifications to NGTB25N120FL2WG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Reach Compliance Code
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Weight
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Pin Count
    Number of Elements
    Power Dissipation
    Case Connection
    Transistor Application
    Halogen Free
    Turn On Time
    Turn Off Time-Nom (toff)
    View Compare
  • NGTB25N120FL2WG
    NGTB25N120FL2WG
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    33 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    2014
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    Insulated Gate BIP Transistors
    385W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    Standard
    385W
    N-CHANNEL
    2.4V
    50A
    154 ns
    1.2kV
    1200V
    600V, 25A, 10 Ω, 15V
    2.4V @ 15V, 25A
    Field Stop
    178nC
    100A
    87ns/179ns
    1.95mJ (on), 600μJ (off)
    20V
    6.5V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NGTB10N60R2DT4G
    NGTB10N60R2DT4G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    4 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    175°C TJ
    Tape & Reel (TR)
    2017
    e3
    yes
    Active
    1 (Unlimited)
    -
    Tin (Sn)
    -
    72W
    -
    -
    Single
    Standard
    72W
    -
    600V
    20A
    90 ns
    600V
    -
    300V, 10A, 30 Ω, 15V
    2.1V @ 15V, 10A
    -
    53nC
    40A
    48ns/120ns
    412μJ (on), 140μJ (off)
    -
    -
    ROHS3 Compliant
    Lead Free
    not_compliant
    1.7V
    600V
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NGTB25N120FL2WG vs NGTB10N60R2DT4G
  • NGTB40N60L2WG
    NGTB40N60L2WG
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    2011
    -
    yes
    Active
    1 (Unlimited)
    -
    -
    -
    417W
    -
    -
    Single
    Standard
    417W
    -
    600V
    80A
    73 ns
    600V
    -
    400V, 40A, 10 Ω, 15V
    2.61V @ 15V, 40A
    Trench Field Stop
    228nC
    160A
    98ns/213ns
    1.17mJ (on), 280μJ (off)
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    2V
    -
    21.08mm
    16.26mm
    5.3mm
    No SVHC
    38.000013g
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NGTB25N120FL2WG vs NGTB40N60L2WG
  • NGTB40N120FLWG
    NGTB40N120FLWG
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 4 days ago)
    -
    -
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    EAR99
    Tin (Sn)
    Insulated Gate BIP Transistors
    260W
    NOT SPECIFIED
    NOT SPECIFIED
    Single
    Standard
    -
    N-CHANNEL
    1.2kV
    80A
    200ns
    1.2kV
    1200V
    600V, 40A, 10 Ω, 15V
    2.2V @ 15V, 40A
    Trench Field Stop
    415nC
    160A
    130ns/385ns
    2.6mJ (on), 1.6mJ (off)
    20V
    6.5V
    RoHS Compliant
    Lead Free
    -
    2V
    -
    21.08mm
    16.26mm
    5.3mm
    No SVHC
    -
    NO
    SILICON
    3
    3
    1
    260W
    COLLECTOR
    POWER CONTROL
    Halogen Free
    172 ns
    630 ns
    NGTB25N120FL2WG vs NGTB40N120FLWG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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