ON Semiconductor NGD8201NT4G
- Part Number:
- NGD8201NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2855056-NGD8201NT4G
- Description:
- IGBT 440V 20A 125W DPAK
- Datasheet:
- NGD8201N,AN
ON Semiconductor NGD8201NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NGD8201NT4G.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC400V
- Max Power Dissipation125W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNGD8201N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Rise Time-Max8000ns
- Element ConfigurationSingle
- Power Dissipation125W
- Case ConnectionCOLLECTOR
- Input TypeLogic
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)440V
- Max Collector Current20A
- Collector Emitter Breakdown Voltage440V
- Max Breakdown Voltage440V
- Turn On Time6500 ns
- Test Condition300V, 9A, 1k Ω, 5V
- Vce(on) (Max) @ Vge, Ic1.9V @ 4.5V, 20A
- Turn Off Time-Nom (toff)18500 ns
- Current - Collector Pulsed (Icm)50A
- Td (on/off) @ 25°C-/5μs
- Gate-Emitter Voltage-Max15V
- Gate-Emitter Thr Voltage-Max2.1V
- Fall Time-Max (tf)14000ns
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NGD8201NT4G Description
For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.
NGD8201NT4G Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
These are Pb?Free Devices
NGD8201NT4G Applications
Ignition Systems
For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.
NGD8201NT4G Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
DPAK Package Offers Smaller Footprint for Increased Board Space
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
These are Pb?Free Devices
NGD8201NT4G Applications
Ignition Systems
NGD8201NT4G More Descriptions
Trans IGBT Chip N-CH 440V 20A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
N-Channel Ignition IGBT 20 A, 400 V
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
Insulated Gate Bipolar Transistor, 20A I(C), 400V V(BR)CES, N-Channel
IGBTs 20A, 400V, Ignition N-Channel
RES SMD 1.78K OHM 1% 1/8W 0805
Single Igbt, 400V, Full Reel; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:-; Power Dissipation:125W; Collector Emitter Voltage Max:440V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:- Rohs Compliant: Yes |Onsemi NGD8201NT4G
N-Channel Ignition IGBT 20 A, 400 V
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
Insulated Gate Bipolar Transistor, 20A I(C), 400V V(BR)CES, N-Channel
IGBTs 20A, 400V, Ignition N-Channel
RES SMD 1.78K OHM 1% 1/8W 0805
Single Igbt, 400V, Full Reel; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:-; Power Dissipation:125W; Collector Emitter Voltage Max:440V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:- Rohs Compliant: Yes |Onsemi NGD8201NT4G
The three parts on the right have similar specifications to NGD8201NT4G.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsRise Time-MaxElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Current - Collector Pulsed (Icm)Td (on/off) @ 25°CGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)REACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeSurface MountTerminal PositionReach Compliance CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NGD8201NT4GSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)2005e3yesObsolete1 (Unlimited)2EAR99Tin (Sn)Insulated Gate BIP Transistors400V125WGULL WING26020A40NGD8201N3R-PSSO-G218000nsSingle125WCOLLECTORLogicPOWER CONTROLN-CHANNEL440V20A440V440V6500 ns300V, 9A, 1k Ω, 5V1.9V @ 4.5V, 20A18500 ns50A-/5μs15V2.1V14000nsNo SVHCNoRoHS CompliantLead Free----------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTape & Reel (TR)2013--Active1 (Unlimited)2EAR99----GULL WINGNOT SPECIFIED-NOT SPECIFIEDNGD8201A-R-PSSO-G21---COLLECTORLogicPOWER CONTROLN-CHANNEL----6500 ns300V, 9A, 1k Ω, 5V1.9V @ 4.5V, 20A18500 ns50A-/5μs-----ROHS3 Compliant-33 WeeksYESSINGLEnot_compliantNot QualifiedSINGLE WITH BUILT-IN DIODE AND RESISTOR125W440V20A
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)2009e0noObsolete1 (Unlimited)2-Tin/Lead (Sn80Pb20)Insulated Gate BIP Transistors400V125WGULL WING24020A30NGD8201N3R-PSSO-G2114000ns-125WCOLLECTORLogicAUTOMOTIVE IGNITIONN-CHANNEL1.9V20A440V-6500 ns300V, 9A, 1k Ω, 5V1.9V @ 4.5V, 20A18500 ns50A-/5μs15V-7000ns--Non-RoHS CompliantContains Lead--SINGLEnot_compliantNot QualifiedSINGLE WITH BUILT-IN DIODE AND RESISTOR---
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)2009e0noObsolete1 (Unlimited)2EAR99Tin/Lead (Sn80Pb20)Insulated Gate BIP Transistors350V125WGULL WING24020A30NGD8205N3R-PSSO-G218000ns-125WCOLLECTORLogicAUTOMOTIVE IGNITIONN-CHANNEL1.9V20A390V-6500 ns300V, 9A, 1k Ω, 5V1.9V @ 4.5V, 20A18500 ns50A-/5μs15V2.1V14000ns--Non-RoHS CompliantContains Lead--SINGLEnot_compliantNot QualifiedSINGLE WITH BUILT-IN DIODE AND RESISTOR---
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