Fairchild/ON Semiconductor NDT3055
- Part Number:
- NDT3055
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478098-NDT3055
- Description:
- MOSFET N-CH 60V 4A SOT-223-4
- ECAD Model:
-
- Datasheet:
- NDT3055
Fairchild/ON Semiconductor NDT3055 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDT3055.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight188mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance100mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating3.7A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 30V
- Current - Continuous Drain (Id) @ 25°C4A Ta
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Rise Time18ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time37 ns
- Continuous Drain Current (ID)4A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)25A
- Dual Supply Voltage60V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs3 V
- Height1.8mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NDT3055 Description
The NDT3055 is an N-Channel enhancement mode power field effect transistor manufactured by Fairchild using its patented, high cell density, DMOS technology. This ultra-high-density technology is specifically designed to reduce on-state resistance while providing excellent switching performance.
NDT3055 Features
4A, 60V. RDS(ON)=0.100Ω@Vas= 10V.
High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package.
NDT3055 Applications
Power Management
Consumer Electronics
The NDT3055 is an N-Channel enhancement mode power field effect transistor manufactured by Fairchild using its patented, high cell density, DMOS technology. This ultra-high-density technology is specifically designed to reduce on-state resistance while providing excellent switching performance.
NDT3055 Features
4A, 60V. RDS(ON)=0.100Ω@Vas= 10V.
High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package.
NDT3055 Applications
Power Management
Consumer Electronics
NDT3055 More Descriptions
N-Channel Enhancement Mode Field Effect Transistor 60V, 4A, 100mΩ
On a Reel of 4000, N-Channel MOSFET, 4 A, 60 V, 3 Tab-Pin SOT-223 Fairchild NDT3055
Trans MOSFET N-CH 60V 4A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
On a Reel of 4000, N-Channel MOSFET, 4 A, 60 V, 3 Tab-Pin SOT-223 Fairchild NDT3055
Trans MOSFET N-CH 60V 4A 4-Pin(3 Tab) SOT-223 T/R - Tape and Reel
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
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