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NCV8440ASTT1G

ON Semiconductor NCV8440ASTT1G

Part Number:
NCV8440ASTT1G
Manufacturer:
ON Semiconductor
Ventron No:
2484669-NCV8440ASTT1G
Description:
MOSFET N-CH 59V 2.6A SOT-223-4
ECAD Model:
Datasheet:
NCV8440ASTT1G

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Specifications
ON Semiconductor NCV8440ASTT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NCV8440ASTT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    13 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.69W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.69W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    110m Ω @ 2.6A, 10V
  • Vgs(th) (Max) @ Id
    1.9V @ 100μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    155pF @ 35V
  • Current - Continuous Drain (Id) @ 25°C
    2.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    4.5nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    59V
  • Drive Voltage (Max Rds On,Min Rds On)
    3.5V 10V
  • Vgs (Max)
    ±15V
  • Continuous Drain Current (ID)
    2.6A
  • Gate to Source Voltage (Vgs)
    15V
  • DS Breakdown Voltage-Min
    52V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NCV8440ASTT1G  Features Diode Clamp Between Gate and Source ESD Protection ? Human Body Model 5000 V Active Over?Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance These are Pb?Free Devices

NCV8440ASTT1G  Applications Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q100 Qualified and PPAP Capable
NCV8440ASTT1G More Descriptions
Trans MOSFET N-CH 59V 2.6A Automotive 4-Pin(3 Tab) SOT-223 T/R
NCV8440 Series N-Channel 52 V 2.6 A SMT Protected Power Mosfet - SOT-223-3
MOSFET, AEC-Q100, N-CH, 55V, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 52V; On Resistance Rds(on): 0.095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.69W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 2.6A I(D), 52V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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