ON Semiconductor MTW32N20E

Name: MTW32N20E
Brand: ON Semiconductor
SKU: 2851807-MTW32N20E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MTW32N20E

Manufacturer:: ON Semiconductor

Ventron No:: 2851807-MTW32N20E

Description:: MOSFET N-CH 200V 32A TO-247

ECAD Model:

Datasheet:: MTW32N20E

Specifications

ON Semiconductor MTW32N20E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTW32N20E.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
32A
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
180W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
180W
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
32A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
120ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
91 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
32A
JEDEC-95 Code
TO-247AE
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.075Ohm
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
128A
Avalanche Energy Rating (Eas)
810 mJ
Height
20.3mm
Length
15.9mm
Width
5.3mm
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

Description
The MTW32N20E is a Power MOSFET, 32 Amps, 200 Volts N?Channel TO?247. High energy can be withstood by this cutting-edge Power MOSFET in both avalanche and commutation modes. Another feature of the new energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.

Features
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole
This is a Pb?Free Device*
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits

Applications
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications
Switch, buck and synchronous rectification
Uninterruptible Power Supplies (UPS)
Small motor control

MTW32N20E More Descriptions

Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247
Trans MOSFET N-CH 200V 32A 3-Pin (3 Tab) TO-247 Rail
MOSFETs- Power and Small Signal 200V 32A N-Channel No-Cancel/No-Return
TRIAC, Power MOSFET, TO-247, 600 V, N, 200 VDC, 200 VDC, 50 mA (Max.), 32 A | ON Semiconductor MTW32N20E
Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE

Certification