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MTP2P50E

ON Semiconductor MTP2P50E

Part Number:
MTP2P50E
Manufacturer:
ON Semiconductor
Ventron No:
2488823-MTP2P50E
Description:
MOSFET P-CH 500V 2A TO-220AB
ECAD Model:
Datasheet:
MTP2P50E

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Specifications
ON Semiconductor MTP2P50E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTP2P50E.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 5 days ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    HIGH VOLTAGE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -500V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -2A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    75W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    75W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6 Ω @ 1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1183pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    2A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    2A
  • Drain-source On Resistance-Max
    6Ohm
  • Drain to Source Breakdown Voltage
    -500V
  • Pulsed Drain Current-Max (IDM)
    6A
  • Avalanche Energy Rating (Eas)
    80 mJ
  • Height
    9.28mm
  • Length
    10.28mm
  • Width
    4.82mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MTP2P50E Description
An upgraded termination strategy is used by this high voltage MOSFET to deliver improved voltage blocking without deteriorating performance over time. In the avalanche and commutation modes, this Power MOSFET is also built to handle tremendous energy. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for high voltage, high speed switching applications in power supplies, converters, and PWM motor controls.

MTP2P50E Features
Robust High Voltage Termination
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
This is a Pb?Free Device*

MTP2P50E Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
MTP2P50E More Descriptions
Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220
MOSFETs- Power and Small Signal 500V 2A P-Channel No-Cancel/No-Return
P CH MOSFET, -500V, 2A, TO-220AB
Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to MTP2P50E.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Weight
    Resistance
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    View Compare
  • MTP2P50E
    MTP2P50E
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 5 days ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    HIGH VOLTAGE
    Other Transistors
    -500V
    MOSFET (Metal Oxide)
    240
    not_compliant
    -2A
    30
    3
    Not Qualified
    1
    75W Tc
    Single
    ENHANCEMENT MODE
    75W
    DRAIN
    12 ns
    P-Channel
    SWITCHING
    6 Ω @ 1A, 10V
    4V @ 250μA
    1183pF @ 25V
    2A Tc
    27nC @ 10V
    14ns
    500V
    10V
    ±20V
    19 ns
    21 ns
    2A
    TO-220AB
    20V
    2A
    6Ohm
    -500V
    6A
    80 mJ
    9.28mm
    10.28mm
    4.82mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • MTP20N15E
    MTP20N15E
    ON Semiconductor
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn80Pb20)
    -
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    240
    not_compliant
    20A
    30
    3
    Not Qualified
    1
    112W Tc
    Single
    ENHANCEMENT MODE
    112W
    DRAIN
    -
    N-Channel
    SWITCHING
    130m Ω @ 10A, 10V
    4V @ 250μA
    1627pF @ 25V
    20A Tc
    55.9nC @ 10V
    77ns
    -
    10V
    ±20V
    49 ns
    33 ns
    20A
    TO-220AB
    20V
    -
    -
    150V
    60A
    60 mJ
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    MTP2P50E vs MTP20N15E
  • MTP23P06V
    MTP23P06V
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 weeks ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2001
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    235
    not_compliant
    -23A
    30
    3
    Not Qualified
    1
    90W Tc
    Single
    ENHANCEMENT MODE
    90W
    DRAIN
    -
    P-Channel
    SWITCHING
    120m Ω @ 11.5A, 10V
    4V @ 250μA
    1620pF @ 25V
    23A Tc
    50nC @ 10V
    98.3ns
    60V
    10V
    ±15V
    62 ns
    41 ns
    23A
    TO-220AB
    15V
    -
    -
    -60V
    -
    794 mJ
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    MTP2P50E vs MTP23P06V
  • MTP2P50EG
    MTP2P50EG
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 5 days ago)
    -
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    HIGH VOLTAGE
    Other Transistors
    -500V
    MOSFET (Metal Oxide)
    260
    -
    -2A
    40
    3
    -
    1
    75W Tc
    Single
    ENHANCEMENT MODE
    75W
    DRAIN
    12 ns
    P-Channel
    SWITCHING
    6 Ω @ 1A, 10V
    4V @ 250μA
    1183pF @ 25V
    2A Tc
    27nC @ 10V
    14ns
    -
    10V
    ±20V
    19 ns
    21 ns
    2A
    TO-220AB
    20V
    2A
    -
    500V
    6A
    80 mJ
    9.28mm
    10.28mm
    4.82mm
    RoHS Compliant
    Lead Free
    NO
    4.535924g
    6Ohm
    -3V
    3 V
    No SVHC
    No
    MTP2P50E vs MTP2P50EG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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