ON Semiconductor MTP23P06V
- Part Number:
- MTP23P06V
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2488920-MTP23P06V
- Description:
- MOSFET P-CH 60V 23A TO-220AB
- Datasheet:
- MTP23P06V
ON Semiconductor MTP23P06V technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MTP23P06V.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAVALANCHE RATED
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating-23A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max90W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation90W
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs120m Ω @ 11.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1620pF @ 25V
- Current - Continuous Drain (Id) @ 25°C23A Tc
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Rise Time98.3ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±15V
- Fall Time (Typ)62 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)23A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)15V
- Drain to Source Breakdown Voltage-60V
- Avalanche Energy Rating (Eas)794 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MTP23P06V Description
High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.
MTP23P06V Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Pb?Free Package is Available*
MTP23P06V Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.
MTP23P06V Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Pb?Free Package is Available*
MTP23P06V Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
MTP23P06V More Descriptions
MOSFETs- Power and Small Signal 60V 23A P-Channel No-Cancel/No-Return
Power MOSFET 23 Amps, 60 Volts
Power Field-Effect Transistor, 23A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoC and 2-years warranty / RFQ for pricing
RES SMD 180K OHM 5% 1/10W 0603
Power MOSFET 23 Amps, 60 Volts
Power Field-Effect Transistor, 23A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoC and 2-years warranty / RFQ for pricing
RES SMD 180K OHM 5% 1/10W 0603
The three parts on the right have similar specifications to MTP23P06V.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)RoHS StatusLead FreePulsed Drain Current-Max (IDM)Turn On Delay TimeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxHeightLengthWidthSurface MountWeightResistanceThreshold VoltageNominal VgsREACH SVHCRadiation HardeningView Compare
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MTP23P06VLAST SHIPMENTS (Last Updated: 2 weeks ago)Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTube2001e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)AVALANCHE RATEDOther Transistors-60VMOSFET (Metal Oxide)235not_compliant-23A303Not Qualified190W TcSingleENHANCEMENT MODE90WDRAINP-ChannelSWITCHING120m Ω @ 11.5A, 10V4V @ 250μA1620pF @ 25V23A Tc50nC @ 10V98.3ns60V10V±15V62 ns41 ns23ATO-220AB15V-60V794 mJNon-RoHS CompliantContains Lead---------------
-
-Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTube2000e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn80Pb20)-FET General Purpose Power150VMOSFET (Metal Oxide)240not_compliant20A303Not Qualified1112W TcSingleENHANCEMENT MODE112WDRAINN-ChannelSWITCHING130m Ω @ 10A, 10V4V @ 250μA1627pF @ 25V20A Tc55.9nC @ 10V77ns-10V±20V49 ns33 ns20ATO-220AB20V150V60 mJNon-RoHS CompliantContains Lead60A-------------
-
LAST SHIPMENTS (Last Updated: 5 days ago)Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTube2000e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)HIGH VOLTAGEOther Transistors-500VMOSFET (Metal Oxide)240not_compliant-2A303Not Qualified175W TcSingleENHANCEMENT MODE75WDRAINP-ChannelSWITCHING6 Ω @ 1A, 10V4V @ 250μA1183pF @ 25V2A Tc27nC @ 10V14ns500V10V±20V19 ns21 ns2ATO-220AB20V-500V80 mJNon-RoHS CompliantContains Lead6A12 ns2A6Ohm9.28mm10.28mm4.82mm-------
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LAST SHIPMENTS (Last Updated: 5 days ago)-Through HoleTO-220-33SILICON-55°C~150°C TJTube2000e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)HIGH VOLTAGEOther Transistors-500VMOSFET (Metal Oxide)260--2A403-175W TcSingleENHANCEMENT MODE75WDRAINP-ChannelSWITCHING6 Ω @ 1A, 10V4V @ 250μA1183pF @ 25V2A Tc27nC @ 10V14ns-10V±20V19 ns21 ns2ATO-220AB20V500V80 mJRoHS CompliantLead Free6A12 ns2A-9.28mm10.28mm4.82mmNO4.535924g6Ohm-3V3 VNo SVHCNo
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