NXP USA Inc. MRF6V2150NBR1
- Part Number:
- MRF6V2150NBR1
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2847986-MRF6V2150NBR1
- Description:
- FET RF 110V 220MHZ TO-272-4
- ECAD Model:
-
- Datasheet:
- MRF6V2150N Series
NXP USA Inc. MRF6V2150NBR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V2150NBR1.
- Factory Lead Time10 Weeks
- Package / CaseTO-272BB
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated110V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency220MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF6V2150
- JESD-30 CodeR-PDFM-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test450mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain25dB
- DS Breakdown Voltage-Min110V
- Power - Output150W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRF6V2150NBR1 Description
MRF6V2150NBR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6V2150NBR1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2150NBR1 has the common source configuration.
MRF6V2150NBR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF6V2150NBR1 Applications
ISM applications
DC large signal applications
MRF6V2150NBR1 More Descriptions
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4FNXP Semiconductors SCT
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
TRANSISTOR, RF, 110V, TO-272; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: 150W; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-272; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4FNXP Semiconductors SCT
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
TRANSISTOR, RF, 110V, TO-272; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: 150W; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-272; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to MRF6V2150NBR1.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - RatedHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusAdditional FeatureView Compare
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MRF6V2150NBR110 WeeksTO-272BBYESSILICONTape & Reel (TR)2006e3Not For New Designs3 (168 Hours)4EAR99Matte Tin (Sn)110V8541.29.00.75FET General Purpose PowerDUALFLAT260220MHz40MRF6V2150R-PDFM-F4Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE450mAAMPLIFIERN-CHANNELLDMOS25dB110V150WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant-- -
-NI-880YESSILICONTape & Reel (TR)2012-Obsolete3 (168 Hours)2EAR99-68V8541.29.00.75-DUALFLAT2602.39GHz40MRF6S24140R-CDFM-F2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE1.3A-N-CHANNELLDMOS15.2dB68V28WMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant-
-
-NI-780S--Tape & Reel (TR)2011-Discontinued3 (168 Hours)-EAR99-120V-----1.3GHz-MRF6V13250-------100mA--LDMOS22.7dB-250W-50VROHS3 Compliant-
-
10 WeeksTO-272BBYESSILICONTape & Reel (TR)2006e3Not For New Designs3 (168 Hours)4EAR99Matte Tin (Sn)110V8541.29.00.75FET General Purpose PowerDUALFLAT260860MHz40MRF6V3090R-PDFM-F4Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE350mAAMPLIFIERN-CHANNELLDMOS22dB115V18WMETAL-OXIDE SEMICONDUCTOR50VROHS3 CompliantESD PROTECTION
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