Texas Instruments CSD87503Q3E
- Part Number:
- CSD87503Q3E
- Manufacturer:
- Texas Instruments
- Ventron No:
- 6402318-CSD87503Q3E
- Description:
- 30-V, N channel NexFET? power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm
- Datasheet:
- csd87503q3e
Texas Instruments CSD87503Q3E technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD87503Q3E.
- VDS (V)30
- ConfigurationDual Common Source
- Rds(on) at VGS=4.5 V (max) (mΩ)21.9
- Rds(on) at VGS=10 V (max) (mΩ)16.9
- IDM - pulsed drain current (max) (A)89
- QG (typ) (nC)13.4
- QGD (typ) (nC)5.8
- QGS (typ) (nC)4.8
- VGS (V)20
- VGSTH (typ) (V)1.7
- ID - silicon limited at TC=25°C (A)10
- ID - package limited (A)10
- Logic levelYes
- Operating temperature range (°C)-55 to 150
- RatingCatalog
The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel devicedesigned for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has lowdrain-to-drain on-resistance that minimizes losses and offers low component count for spaceconstrained applications.
The three parts on the right have similar specifications to CSD87503Q3E.
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ImagePart NumberManufacturerVDS (V)ConfigurationRds(on) at VGS=4.5 V (max) (mΩ)Rds(on) at VGS=10 V (max) (mΩ)IDM - pulsed drain current (max) (A)QG (typ) (nC)QGD (typ) (nC)QGS (typ) (nC)VGS (V)VGSTH (typ) (V)ID - silicon limited at TC=25°C (A)ID - package limited (A)Logic levelOperating temperature range (°C)RatingView Compare
-
CSD87503Q3E30Dual Common Source21.916.98913.45.84.8201.71010Yes-55 to 150Catalog-
-
20Dual Common Drain24-3761.41.2100.977Yes-55 to 150Catalog
-
30Dual Common Drain5.5-1202866.3100.91717Yes-55 to 150Catalog
-
30Dual Common Source38-456.30.71.91012727Yes-55 to 150Catalog
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