CSD87503Q3E

Texas Instruments CSD87503Q3E

Part Number:
CSD87503Q3E
Manufacturer:
Texas Instruments
Ventron No:
6402318-CSD87503Q3E
Description:
30-V, N channel NexFET? power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm
ECAD Model:
Datasheet:
csd87503q3e

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Specifications
Texas Instruments CSD87503Q3E technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD87503Q3E.
  • VDS (V)
    30
  • Configuration
    Dual Common Source
  • Rds(on) at VGS=4.5 V (max) (mΩ)
    21.9
  • Rds(on) at VGS=10 V (max) (mΩ)
    16.9
  • IDM - pulsed drain current (max) (A)
    89
  • QG (typ) (nC)
    13.4
  • QGD (typ) (nC)
    5.8
  • QGS (typ) (nC)
    4.8
  • VGS (V)
    20
  • VGSTH (typ) (V)
    1.7
  • ID - silicon limited at TC=25°C (A)
    10
  • ID - package limited (A)
    10
  • Logic level
    Yes
  • Operating temperature range (°C)
    -55 to 150
  • Rating
    Catalog
Description

The CSD87503Q3E is a 30-V, 13.5-mΩ, common source, dual N-channel devicedesigned for USB Type-C/PD and battery protection. This SON 3.3 × 3.3 mm device has lowdrain-to-drain on-resistance that minimizes losses and offers low component count for spaceconstrained applications.

Product Comparison
The three parts on the right have similar specifications to CSD87503Q3E.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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