CSD23381F4T

Texas Instruments CSD23381F4T

Part Number:
CSD23381F4T
Manufacturer:
Texas Instruments
Ventron No:
6402302-CSD23381F4T
Description:
-12-V, P channel NexFET? power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd23381f4

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Specifications
Texas Instruments CSD23381F4T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD23381F4T.
  • VDS (V)
    -12
  • VGS (V)
    -8
  • Configuration
    Single
  • Rds(on) at VGS=4.5 V (max) (mΩ)
    175
  • Rds(on) at VGS=2.5 V (max) (mΩ)
    300
  • Rds(on) at VGS=1.8 V (max) (mΩ)
    970
  • Id peak (max) (A)
    -9
  • Id max cont (A)
    -2.3
  • QG (typ) (nC)
    1.14
  • QGD (typ) (nC)
    0.19
  • QGS (typ) (nC)
    0.3
  • VGSTH (typ) (V)
    -0.95
  • ID - silicon limited at TC=25°C (A)
    2.3
  • Logic level
    Yes
  • Operating temperature range (°C)
    -55 to 150
  • Rating
    Catalog
Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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