NXP USA Inc. MRF6P24190HR6
- Part Number:
- MRF6P24190HR6
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3069940-MRF6P24190HR6
- Description:
- FET RF 68V 2.39GHZ NI-1230
- ECAD Model:
-
- Datasheet:
- MRF6P24190H Series
NXP USA Inc. MRF6P24190HR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6P24190HR6.
- Factory Lead Time8 Weeks
- Package / CaseNI-1230
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated68V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency2.39GHz
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-CDFM-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test1.9A
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain14dB
- DS Breakdown Voltage-Min68V
- Power - Output40W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test28V
- RoHS StatusROHS3 Compliant
MRF6P24190HR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6P24190HR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6P24190HR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6P24190HR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6P24190HR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6P24190HR6 More Descriptions
CW Lateral N-Channel RF Power MOSFET, 2450 MHz, 190 W, 28 V
RF Power Transistor, 2.4 to 2.5 GHz, 190 W, Typ Gain in dB is 13.2 @ 2450 MHz, 28 V, SOT1787-1, LDMOS
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:68V; Continuous Drain Current, Id:10µA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:2V; Package/Case:Case 375D ;RoHS Compliant: Yes
RF Power Transistor, 2.4 to 2.5 GHz, 190 W, Typ Gain in dB is 13.2 @ 2450 MHz, 28 V, SOT1787-1, LDMOS
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:68V; Continuous Drain Current, Id:10µA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:2V; Package/Case:Case 375D ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MRF6P24190HR6.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusBase Part NumberPower Dissipation-Max (Abs)JESD-609 CodeTerminal FinishAdditional FeatureView Compare
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MRF6P24190HR68 WeeksNI-1230YESSILICONTape & Reel (TR)2008Obsolete3 (168 Hours)4EAR9968V8541.29.00.75FET General Purpose PowerDUALFLAT2602.39GHz40R-CDFM-F4Not Qualified225°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCE1.9AAMPLIFIERN-CHANNELLDMOS14dB68V40WMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant------ -
10 WeeksNI-780SYESSILICONTape & Reel (TR)2011ActiveNot Applicable2EAR99120V8541.29.00.75FET General Purpose PowerDUALFLAT2601.3GHz40R-CDFP-F2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS22.7dB120V250WMETAL-OXIDE SEMICONDUCTOR50VROHS3 CompliantMRF6V13250476W---
-
-NI-880--Tape & Reel (TR)2007Obsolete3 (168 Hours)-EAR9968V-----1.93GHz~1.99GHz--------1.15A--LDMOS16dB-29W-28VROHS3 CompliantMRF6S19140----
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10 WeeksTO-272BBYESSILICONTape & Reel (TR)2006Not For New Designs3 (168 Hours)4EAR99110V8541.29.00.75FET General Purpose PowerDUALFLAT260860MHz40R-PDFM-F4Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE350mAAMPLIFIERN-CHANNELLDMOS22dB115V18WMETAL-OXIDE SEMICONDUCTOR50VROHS3 CompliantMRF6V3090-e3Matte Tin (Sn)ESD PROTECTION
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