Texas Instruments CSD86311W1723
- Part Number:
- CSD86311W1723
- Manufacturer:
- Texas Instruments
- Ventron No:
- 6402312-CSD86311W1723
- Description:
- 25-V, N channel NexFET? power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm
- ECAD Model:
-
- Datasheet:
- csd86311w1723
- VDS (V)25
- ConfigurationDual Common Source
- Rds(on) at VGS=4.5 V (max) (mΩ)42
- IDM - pulsed drain current (max) (A)4.5
- QG (typ) (nC)3.1
- QGD (typ) (nC)0.33
- QGS (typ) (nC)0.85
- VGS (V)10
- VGSTH (typ) (V)1
- ID - silicon limited at TC=25°C (A)4.5
- ID - package limited (A)4.5
- Logic levelYes
- Operating temperature range (°C)-55 to 150
- RatingCatalog
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
-
ImagePart NumberManufacturerVDS (V)ConfigurationRds(on) at VGS=4.5 V (max) (mΩ)IDM - pulsed drain current (max) (A)QG (typ) (nC)QGD (typ) (nC)QGS (typ) (nC)VGS (V)VGSTH (typ) (V)ID - silicon limited at TC=25°C (A)ID - package limited (A)Logic levelOperating temperature range (°C)RatingView Compare
-
CSD86311W172325Dual Common Source424.53.10.330.851014.54.5Yes-55 to 150Catalog- -
20Dual Common Drain243761.41.2100.977Yes-55 to 150Catalog
-
30Dual Common Drain5.51202866.3100.91717Yes-55 to 150Catalog
-
30Dual Common Source38456.30.71.91012727Yes-55 to 150Catalog
-
30-V, N channel NexFET? power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm
-
25-V, N channel NexFET? power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm
-
20-V, N channel NexFET? power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro
-
30-V, N channel NexFET? power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm
-
30-V, N channel NexFET? power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm
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