MRF6V13250HSR5

NXP USA Inc. MRF6V13250HSR5

Part Number:
MRF6V13250HSR5
Manufacturer:
NXP USA Inc.
Ventron No:
2848450-MRF6V13250HSR5
Description:
FET RF 120V 1.3GHZ NI780S
ECAD Model:
Datasheet:
MRF6V13250HSR5

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
NXP USA Inc. MRF6V13250HSR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V13250HSR5.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-780S
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Voltage - Rated
    120V
  • HTS Code
    8541.29.00.75
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    1.3GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MRF6V13250
  • JESD-30 Code
    R-CDFP-F2
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    225°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    100mA
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Gain
    22.7dB
  • DS Breakdown Voltage-Min
    120V
  • Power - Output
    250W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    476W
  • Voltage - Test
    50V
  • RoHS Status
    ROHS3 Compliant
Description
MRF6V13250HSR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6V13250HSR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6V13250HSR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6V13250HSR5 More Descriptions
RF Power Transistor,960 to 1500 MHz, 250 W, Typ Gain in dB is 22.7 @ 1300 MHz, 50 V, LDMOS, SOT1793
Lateral N-Channel Rf Power Mosfet, 1300 Mhz, 250 W, 50 V/Reel Rohs Compliant: Yes |Nxp MRF6V13250HSR5
Trans RF MOSFET N-CH 120V 3-Pin NI-780S T/R
RF MOSFET Transistors VHV6 250W 50V NI780HS
Product Comparison
The three parts on the right have similar specifications to MRF6V13250HSR5.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Voltage - Rated
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Current - Test
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Gain
    DS Breakdown Voltage-Min
    Power - Output
    FET Technology
    Power Dissipation-Max (Abs)
    Voltage - Test
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Additional Feature
    View Compare
  • MRF6V13250HSR5
    MRF6V13250HSR5
    10 Weeks
    NI-780S
    YES
    SILICON
    Tape & Reel (TR)
    2011
    Active
    Not Applicable
    2
    EAR99
    120V
    8541.29.00.75
    FET General Purpose Power
    DUAL
    FLAT
    260
    1.3GHz
    40
    MRF6V13250
    R-CDFP-F2
    Not Qualified
    225°C
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    100mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    22.7dB
    120V
    250W
    METAL-OXIDE SEMICONDUCTOR
    476W
    50V
    ROHS3 Compliant
    -
    -
    -
    -
  • MRF6V13250HR3
    -
    SOT-957A
    -
    -
    Tape & Reel (TR)
    2011
    Discontinued
    3 (168 Hours)
    -
    EAR99
    120V
    -
    -
    -
    -
    -
    1.3GHz
    -
    MRF6V13250
    -
    -
    -
    -
    -
    -
    -
    100mA
    -
    -
    LDMOS
    22.7dB
    -
    250W
    -
    -
    50V
    ROHS3 Compliant
    -
    -
    -
  • MRF6S19140HR3
    -
    NI-880
    -
    -
    Tape & Reel (TR)
    2007
    Obsolete
    3 (168 Hours)
    -
    EAR99
    68V
    -
    -
    -
    -
    -
    1.93GHz~1.99GHz
    -
    MRF6S19140
    -
    -
    -
    -
    -
    -
    -
    1.15A
    -
    -
    LDMOS
    16dB
    -
    29W
    -
    -
    28V
    ROHS3 Compliant
    -
    -
    -
  • MRF6V3090NBR1
    10 Weeks
    TO-272BB
    YES
    SILICON
    Tape & Reel (TR)
    2006
    Not For New Designs
    3 (168 Hours)
    4
    EAR99
    110V
    8541.29.00.75
    FET General Purpose Power
    DUAL
    FLAT
    260
    860MHz
    40
    MRF6V3090
    R-PDFM-F4
    Not Qualified
    225°C
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    350mA
    AMPLIFIER
    N-CHANNEL
    LDMOS
    22dB
    115V
    18W
    METAL-OXIDE SEMICONDUCTOR
    -
    50V
    ROHS3 Compliant
    e3
    Matte Tin (Sn)
    ESD PROTECTION
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.