MRF6S24140HR3

NXP USA Inc. MRF6S24140HR3

Part Number:
MRF6S24140HR3
Manufacturer:
NXP USA Inc.
Ventron No:
2848206-MRF6S24140HR3
Description:
FET RF 68V 2.39GHZ NI-880
ECAD Model:
Datasheet:
MRF6S24140HR3

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Specifications
NXP USA Inc. MRF6S24140HR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6S24140HR3.
  • Package / Case
    NI-880
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Voltage - Rated
    68V
  • HTS Code
    8541.29.00.75
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    2.39GHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MRF6S24140
  • JESD-30 Code
    R-CDFM-F2
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    225°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Current - Test
    1.3A
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Gain
    15.2dB
  • DS Breakdown Voltage-Min
    68V
  • Power - Output
    28W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
MRF6S24140HR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6S24140HR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6S24140HR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6S24140HR3 More Descriptions
CW Lateral N-Channel RF Power MOSFET, 2450 MHz, 140 W, 28 V
Trans RF MOSFET N-CH 68V 3-Pin NI-880 T/R
RF MOSFET Transistors 2.4GHZ HV6 W-CDMA NI880H
MOSFET RF N-CHAN 28V 140W NI-880
1.5A,DDR MEMORY TERML REDFN 8 220.9MM PBFR Code = 0794
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:68V; Continuous Drain Current, Id:10µA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:2V; Package/Case:Case 465B ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MRF6S24140HR3.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Voltage - Rated
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Current - Test
    Polarity/Channel Type
    Transistor Type
    Gain
    DS Breakdown Voltage-Min
    Power - Output
    FET Technology
    Voltage - Test
    RoHS Status
    Factory Lead Time
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Subcategory
    Transistor Application
    View Compare
  • MRF6S24140HR3
    MRF6S24140HR3
    NI-880
    YES
    SILICON
    Tape & Reel (TR)
    2012
    Obsolete
    3 (168 Hours)
    2
    EAR99
    68V
    8541.29.00.75
    DUAL
    FLAT
    260
    2.39GHz
    40
    MRF6S24140
    R-CDFM-F2
    Not Qualified
    225°C
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    1.3A
    N-CHANNEL
    LDMOS
    15.2dB
    68V
    28W
    METAL-OXIDE SEMICONDUCTOR
    28V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • MRF6S19140HR3
    NI-880
    -
    -
    Tape & Reel (TR)
    2007
    Obsolete
    3 (168 Hours)
    -
    EAR99
    68V
    -
    -
    -
    -
    1.93GHz~1.99GHz
    -
    MRF6S19140
    -
    -
    -
    -
    -
    -
    -
    1.15A
    -
    LDMOS
    16dB
    -
    29W
    -
    28V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
  • MRF6V13250HSR3
    NI-780S
    -
    -
    Tape & Reel (TR)
    2011
    Discontinued
    3 (168 Hours)
    -
    EAR99
    120V
    -
    -
    -
    -
    1.3GHz
    -
    MRF6V13250
    -
    -
    -
    -
    -
    -
    -
    100mA
    -
    LDMOS
    22.7dB
    -
    250W
    -
    50V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
  • MRF6V3090NBR1
    TO-272BB
    YES
    SILICON
    Tape & Reel (TR)
    2006
    Not For New Designs
    3 (168 Hours)
    4
    EAR99
    110V
    8541.29.00.75
    DUAL
    FLAT
    260
    860MHz
    40
    MRF6V3090
    R-PDFM-F4
    Not Qualified
    225°C
    1
    SINGLE
    ENHANCEMENT MODE
    SOURCE
    350mA
    N-CHANNEL
    LDMOS
    22dB
    115V
    18W
    METAL-OXIDE SEMICONDUCTOR
    50V
    ROHS3 Compliant
    10 Weeks
    e3
    Matte Tin (Sn)
    ESD PROTECTION
    FET General Purpose Power
    AMPLIFIER
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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