Texas Instruments CSD85302LT
- Part Number:
- CSD85302LT
- Manufacturer:
- Texas Instruments
- Ventron No:
- 6402311-CSD85302LT
- Description:
- 20-V, N channel NexFET? power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro
- ECAD Model:
-
- Datasheet:
- csd85302l
- VDS (V)20
- ConfigurationDual Common Drain
- Rds(on) at VGS=4.5 V (max) (mΩ)24
- IDM - pulsed drain current (max) (A)37
- QG (typ) (nC)6
- QGD (typ) (nC)1.4
- QGS (typ) (nC)1.2
- VGS (V)10
- VGSTH (typ) (V)0.9
- ID - silicon limited at TC=25°C (A)7
- ID - package limited (A)7
- Logic levelYes
- Operating temperature range (°C)-55 to 150
- RatingCatalog
This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.
-
ImagePart NumberManufacturerVDS (V)ConfigurationRds(on) at VGS=4.5 V (max) (mΩ)IDM - pulsed drain current (max) (A)QG (typ) (nC)QGD (typ) (nC)QGS (typ) (nC)VGS (V)VGSTH (typ) (V)ID - silicon limited at TC=25°C (A)ID - package limited (A)Logic levelOperating temperature range (°C)RatingView Compare
-
CSD85302LT20Dual Common Drain243761.41.2100.977Yes-55 to 150Catalog- -
25Dual Common Source424.53.10.330.851014.54.5Yes-55 to 150Catalog
-
30Dual Common Drain5.51202866.3100.91717Yes-55 to 150Catalog
-
30Dual Common Source38456.30.71.91012727Yes-55 to 150Catalog
-
30-V, N channel NexFET? power MOSFET, dual common source SON 3 mm x 3 mm, 21.9 mOhm
-
25-V, N channel NexFET? power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm
-
20-V, N channel NexFET? power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro
-
30-V, N channel NexFET? power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm
-
30-V, N channel NexFET? power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm
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