NXP USA Inc. MRF6V3090NBR1
- Part Number:
- MRF6V3090NBR1
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2848084-MRF6V3090NBR1
- Description:
- FET RF 110V 860MHZ TO272-4
- ECAD Model:
-
- Datasheet:
- MRF6V3090NBR1
NXP USA Inc. MRF6V3090NBR1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF6V3090NBR1.
- Factory Lead Time10 Weeks
- Package / CaseTO-272BB
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated110V
- Additional FeatureESD PROTECTION
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency860MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF6V3090
- JESD-30 CodeR-PDFM-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test350mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS
- Gain22dB
- DS Breakdown Voltage-Min115V
- Power - Output18W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRF6V3090NBR1 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6V3090NBR1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6V3090NBR1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF6V3090NBR1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF6V3090NBR1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF6V3090NBR1 More Descriptions
RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET TO-272
RF Mosfet LDMOS 50 V 350 mA 860MHz 22dB 18W TO-272 WB-4
Trans RF MOSFET N-CH 110V 5-Pin TO-270 WB T/R
RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET TO-272
RF Mosfet LDMOS 50 V 350 mA 860MHz 22dB 18W TO-272 WB-4
Trans RF MOSFET N-CH 110V 5-Pin TO-270 WB T/R
RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
The three parts on the right have similar specifications to MRF6V3090NBR1.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - RatedAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusReach Compliance CodeView Compare
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MRF6V3090NBR110 WeeksTO-272BBYESSILICONTape & Reel (TR)2006e3Not For New Designs3 (168 Hours)4EAR99Matte Tin (Sn)110VESD PROTECTION8541.29.00.75FET General Purpose PowerDUALFLAT260860MHz40MRF6V3090R-PDFM-F4Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE350mAAMPLIFIERN-CHANNELLDMOS22dB115V18WMETAL-OXIDE SEMICONDUCTOR50VROHS3 Compliant-- -
-TO-272-4--Tape & Reel (TR)2006e0Obsolete3 (168 Hours)--Tin/Lead (Sn/Pb)68V------880MHz-MRF6S9125-------950mA--LDMOS20.2dB-27W-28VNon-RoHS Compliantnot_compliant
-
-SOT-957A--Tape & Reel (TR)2011-Discontinued3 (168 Hours)-EAR99-120V------1.3GHz-MRF6V13250-------100mA--LDMOS22.7dB-250W-50VROHS3 Compliant-
-
-NI-880--Tape & Reel (TR)2007-Obsolete3 (168 Hours)-EAR99-68V------1.93GHz~1.99GHz-MRF6S19140-------1.15A--LDMOS16dB-29W-28VROHS3 Compliant-
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