ON Semiconductor MJL21193G

Name: MJL21193G
Brand: ON Semiconductor
SKU: 2463320-MJL21193G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJL21193G

Manufacturer:: ON Semiconductor

Ventron No:: 2463320-MJL21193G

Description:: TRANS PNP 250V 16A TO264

ECAD Model:

Datasheet:: MJL21193G

Specifications

ON Semiconductor MJL21193G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL21193G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
22 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1995
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-250V
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
260
Current Rating
-16A
Frequency
4MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
ISOLATED
Transistor Application
AMPLIFIER
Gain Bandwidth Product
4MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 8A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
29mm
Length
20.3mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJL21193G Overview
In this device, the DC current gain is 25 @ 8A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 3.2A, 16A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -16A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 16A volts at Single BJT transistors maximum.

MJL21193G Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz

MJL21193G Applications
There are a lot of ON Semiconductor
MJL21193G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJL21193G More Descriptions

Transistor, Bipolar,Si,PNP,Power,VCEO 250VDC,IC 16A,PD 200W,TO-3PBL (TO-264)
Bipolar Transistor, PNP, 250 V, 16 A
250V 200W 25@8A,5V 16A PNP TO-264-3 Bipolar Transistors - BJT ROHS
Transistor MJL21193 General Purpose PNP 250 Volt 16 Amp TO-264
MJL Series 250 V 16 A Flange Mount PNP Silicon Power Transistor - TO-264
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 250V 16A 3-Pin(3 Tab) TO-264 Rail - Rail/Tube
TRANSISTOR, PNP, TO-264; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 16A; DC Current Gain hFE: 75hFE; Transistor Case Sty
Bipolar Transistor, Pnp, -250V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:250V; Continuous Collector Current:16A; Power Dissipation:200Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:4Mhz Rohs Compliant: Yes |Onsemi MJL21193G.

Product Comparison

The three parts on the right have similar specifications to MJL21193G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Terminal Position

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
MJL21193G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

22 Weeks

Tin

Through Hole

TO-264-3, TO-264AA

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

1995

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-250V

200W

260

-16A

4MHz

40

3

1

Single

200W

ISOLATED

AMPLIFIER

4MHz

PNP

PNP

250V

16A

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

250V

4MHz

1.4V

400V

5V

25

29mm

20.3mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
MJL21195G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

-

Through Hole

TO-264-3, TO-264AA

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-250V

200W

260

-16A

4MHz

40

3

1

Single

200W

-

AMPLIFIER

4MHz

PNP

PNP

250V

16A

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

250V

4MHz

4V

400V

5V

25

26.4mm

20.3mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

-

-

-

-

-

-

-

-

MJL21193G vs MJL21195G
MJL21194

ON Semiconductor

-

-

-

Through Hole

TO-264-3, TO-264AA

NO

-

-

SILICON

-65°C~150°C TJ

Tube

-

e0

yes

Obsolete

3 (168 Hours)

3

-

-

-

-

240

-

-

30

3

1

-

-

ISOLATED

AMPLIFIER

-

NPN

NPN

-

-

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

-

4MHz

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TIN LEAD

SINGLE

R-PSFM-T3

COMMERCIAL

SINGLE

200W

250V

16A

4MHz

MJL21193G vs MJL21194
MJL21193

ON Semiconductor

-

-

-

Through Hole

TO-264-3, TO-264AA

NO

-

-

SILICON

-65°C~150°C TJ

Tube

-

e0

yes

Obsolete

3 (168 Hours)

3

-

-

-

-

240

-

-

30

3

1

-

-

ISOLATED

AMPLIFIER

-

PNP

PNP

-

-

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

-

4MHz

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TIN LEAD

SINGLE

R-PSFM-T3

COMMERCIAL

SINGLE

200W

250V

16A

4MHz

MJL21193G vs MJL21193

Certification

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MJL21193G Specification

Part Number	Manufacturers	Description	Stock	Price
MJL21193G DISTI #32396237	ON Semiconductor	Trans GP BJT PNP 250V 16A 3-Pin(3 Tab) TO-264 Tube RoHS: Compliant	2905	16 $4.1
MJL21193G DISTI #MJL21193GOS-ND	ON Semiconductor	TRANS PNP 250V 16A TO264 RoHS: Compliant	0	1 $5.01 25 $4.2524 100 $3.6855 500 $3.1374 1000 $2.646
MJL21193G DISTI #MJL21193G	ON Semiconductor	Trans GP BJT PNP 250V 16A 3-Pin(3 Tab) TO-264 Rail RoHS: Compliant	9335	25 $2.35294 27 $2.33766 52 $2.30769 125 $2.27848 250 $2.22222
MJL21193G DISTI #MJL21193G	ON Semiconductor	Trans GP BJT PNP 250V 16A 3-Pin(3 Tab) TO-264 Rail RoHS: Compliant	0	125 $2.59 127 $2.49 252 $2.49 625 $2.49 1250 $2.39
MJL21193G DISTI #26K4490	ON Semiconductor	Trans GP BJT PNP 250V 16A 3-Pin(3 Tab) TO-264 Rail RoHS: Compliant	0	1 $5.25 10 $4.46 25 $4.26 50 $4.07 100 $3.87 250 $3.67 500 $3.29
MJL21193G DISTI #26K4490	ON Semiconductor	BIPOLAR TRANSISTOR, PNP, -250V, Transistor Polari	2905	1 $3.28 10 $3 25 $3 50 $3 100 $2.77 250 $2.77 500 $2.77
MJL21193G DISTI #38K5625	ON Semiconductor	Bipolar (BJT) Single Transistor, Audio, PNP, 250 V	879	1 $4.76 10 $4.05 25 $3.87 50 $3.69 100 $3.51 250 $3.33 500 $2.98
MJL21193G. DISTI #27AC8990	ON Semiconductor	BIP T0264 PNP 16A 250V ROHS COMPLIANT: YES	9335	1 $4.86 10 $4.14 25 $3.95 50 $3.69 100 $3.51 250 $3.33 500 $2.98
MJL21193G DISTI #70100024	ON Semiconductor	Transistor, Bipolar, Si, PNP, Power, VCEO 250 RoHS: Compliant	0	25 $4.99
MJL21193G DISTI #863-MJL21193G	ON Semiconductor	Bipolar Transistors - BJT 16A 250V 200W PNP RoHS: Compliant	0	1 $4.76 10 $4.05 100 $3.51 250 $3.33 500 $2.98 1000 $2.52 2500 $2.39
MJL21193 DISTI #863-MJL21193	ON Semiconductor	Bipolar Transistors - BJT 16A 250V 200W PNP RoHS: Not Compliant	0
MJL21193G DISTI #	ON Semiconductor	Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, RoHS: Compliant	9084	1 $3.24 25 $3.01 100 $2.88 500 $2.77 1000 $2.63
MJL21193G DISTI #	ON Semiconductor	Trans GP BJT PNP 250V 16A 3-Pin(3 Tab) TO-264 Rail RoHS: Compliant	1190	10 $5 25 $3.19 50 $2.78 500 $2.52
MJL21193G DISTI #7905404P	ON Semiconductor	PNP POWER TRANSISTOR 250V 16A 200W TO264, TU	284	13 $2.91
MJL21193G DISTI #7905404	ON Semiconductor	PNP POWER TRANSISTOR 250V 16A 200W TO264, EA	82	1 $3.58 13 $2.91
MJL21193G DISTI #1216419	ON Semiconductor	PNP POWER TRANSISTOR 250V 16A 200W TO264, TU	125	25 $2.907 125 $2.527 250 $2.404
MJL21193G DISTI #	ON Semiconductor		8377
MJL21193G DISTI #XSFR00000007190		Power Bipolar Transistor, 16A I(C),250VV(BR)CEO,1- RoHS: Compliant	0
MJL21193G DISTI #9555781	ON Semiconductor	TRANSISTOR, PNP, TO-264 RoHS: Compliant	3915	1 $4.13 10 $3.15 100 $2.73 250 $2.6 500 $2.33
MJL21193G DISTI #9555781	ON Semiconductor	TRANSISTOR, PNP, TO-264 RoHS: Compliant	3798	1 $7.17 10 $6.1 100 $5.29 250 $5.02 500 $4.49 1000 $3.8 2500 $3.6 5000 $3.47

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ON Semiconductor MJL21193G

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