ON Semiconductor MJL21195G

Name: MJL21195G
Brand: ON Semiconductor
SKU: 2845327-MJL21195G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJL21195G

Manufacturer:: ON Semiconductor

Ventron No:: 2845327-MJL21195G

Description:: TRANS PNP 250V 16A TO264

ECAD Model:

Datasheet:: MJL21195G

Specifications

ON Semiconductor MJL21195G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL21195G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
2 Weeks
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-250V
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
260
Current Rating
-16A
Frequency
4MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
4MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 8A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
4V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
26.4mm
Length
20.3mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJL21195G Overview
In this device, the DC current gain is 25 @ 8A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 4V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 3.2A, 16A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -16A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 16A volts at Single BJT transistors maximum.

MJL21195G Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is -16A
a transition frequency of 4MHz

MJL21195G Applications
There are a lot of ON Semiconductor
MJL21195G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJL21195G More Descriptions

Bipolar Transistor, PNP, 250 V, 16 A
MJL Series 250 V 16 A Flange Mount PNP Silicon Power Transistor - TO-264
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 250V 16A 3-Pin(3 Tab) TO-3BPL Rail - Rail/Tube
Bipolar Transistors - BJT BIP PNP 16A 250V FG
The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output disk head positioners and linear applications.
Bipolar Transistor, Pnp, -250V; Transistor Polarity:Pnp; Collector Emitter Voltage Max:250V; Continuous Collector Current:16A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:4Mhz Rohs Compliant: Yes |Onsemi MJL21195G
TRANSISTOR, BIPOL, PNP, 250V, TO-264-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -250V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: -16A; DC Current Gain hFE: 8hFE; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Product Comparison

The three parts on the right have similar specifications to MJL21195G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Qualification Status

Terminal Position

JESD-30 Code

Configuration

Case Connection

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Contact Plating

View Compare
MJL21195G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

Through Hole

TO-264-3, TO-264AA

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

Other Transistors

-250V

200W

260

-16A

4MHz

40

3

1

Single

200W

AMPLIFIER

4MHz

PNP

PNP

250V

16A

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

250V

4MHz

4V

400V

5V

25

26.4mm

20.3mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
MJL21196

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Through Hole

TO-264-3, TO-264AA

NO

3

-

SILICON

-65°C~150°C TJ

Tube

1995

e0

no

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

Other Transistors

250V

200W

240

16A

-

30

3

1

Single

-

SWITCHING

4MHz

NPN

NPN

4V

16A

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

250V

4MHz

1.4V

400V

5V

25

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

not_compliant

Not Qualified

-

-

-

-

-

-

-

-

-

MJL21195G vs MJL21196
MJL21194

ON Semiconductor

-

-

Through Hole

TO-264-3, TO-264AA

NO

-

-

SILICON

-65°C~150°C TJ

Tube

-

e0

yes

Obsolete

3 (168 Hours)

3

-

TIN LEAD

-

-

-

240

-

-

30

3

1

-

-

AMPLIFIER

-

NPN

NPN

-

-

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

-

4MHz

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

COMMERCIAL

SINGLE

R-PSFM-T3

SINGLE

ISOLATED

200W

250V

16A

4MHz

-

MJL21195G vs MJL21194
MJL21196G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

2 Weeks

Through Hole

TO-264-3, TO-264AA

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

250V

200W

260

16A

4MHz

40

3

1

Single

200W

AMPLIFIER

4MHz

NPN

NPN

250V

16A

25 @ 8A 5V

100μA

4V @ 3.2A, 16A

250V

4MHz

1.4V

400V

5V

25

26.4mm

20.3mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

Tin

MJL21195G vs MJL21196G