MJL21196

ON Semiconductor MJL21196

Part Number:
MJL21196
Manufacturer:
ON Semiconductor
Ventron No:
3069165-MJL21196
Description:
TRANS NPN 250V 16A TO264
ECAD Model:
Datasheet:
MJL21196

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Specifications
ON Semiconductor MJL21196 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL21196.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Published
    1995
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    250V
  • Max Power Dissipation
    200W
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    16A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    4MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    4V
  • Max Collector Current
    16A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 8A 5V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 3.2A, 16A
  • Collector Emitter Breakdown Voltage
    250V
  • Transition Frequency
    4MHz
  • Collector Emitter Saturation Voltage
    1.4V
  • Collector Base Voltage (VCBO)
    400V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    25
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MJL21196 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 8A 5V.The collector emitter saturation voltage is 1.4V, which allows for maximum design flexibility.When VCE saturation is 4V @ 3.2A, 16A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 16A.In the part, the transition frequency is 4MHz.A maximum collector current of 16A volts can be achieved.

MJL21196 Features
the DC current gain for this device is 25 @ 8A 5V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz


MJL21196 Applications
There are a lot of ON Semiconductor
MJL21196 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJL21196 More Descriptions
Bipolar Transistor, NPN, 250 V, 16 A
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
COMPLEMENTARY SILICON POWER TRANSISTORS | TRANS NPN 250V 16A TO264
Product Comparison
The three parts on the right have similar specifications to MJL21196.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    RoHS Status
    Lead Free
    Factory Lead Time
    Weight
    Frequency
    Power Dissipation
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Terminal Position
    JESD-30 Code
    Configuration
    Case Connection
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    View Compare
  • MJL21196
    MJL21196
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Through Hole
    TO-264-3, TO-264AA
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    1995
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    250V
    200W
    240
    not_compliant
    16A
    30
    3
    Not Qualified
    1
    Single
    SWITCHING
    4MHz
    NPN
    NPN
    4V
    16A
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    250V
    4MHz
    1.4V
    400V
    5V
    25
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJL21195G
    ACTIVE (Last Updated: 2 days ago)
    Through Hole
    TO-264-3, TO-264AA
    NO
    3
    SILICON
    -65°C~150°C TJ
    Tube
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -250V
    200W
    260
    -
    -16A
    40
    3
    -
    1
    Single
    AMPLIFIER
    4MHz
    PNP
    PNP
    250V
    16A
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    250V
    4MHz
    4V
    400V
    5V
    25
    ROHS3 Compliant
    Lead Free
    2 Weeks
    4.535924g
    4MHz
    200W
    26.4mm
    20.3mm
    5.3mm
    No SVHC
    No
    -
    -
    -
    -
    -
    -
    -
    -
  • MJL21194
    -
    Through Hole
    TO-264-3, TO-264AA
    NO
    -
    SILICON
    -65°C~150°C TJ
    Tube
    -
    e0
    yes
    Obsolete
    3 (168 Hours)
    3
    -
    TIN LEAD
    -
    -
    -
    240
    -
    -
    30
    3
    COMMERCIAL
    1
    -
    AMPLIFIER
    -
    NPN
    NPN
    -
    -
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    -
    4MHz
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SINGLE
    R-PSFM-T3
    SINGLE
    ISOLATED
    200W
    250V
    16A
    4MHz
  • MJL21193
    -
    Through Hole
    TO-264-3, TO-264AA
    NO
    -
    SILICON
    -65°C~150°C TJ
    Tube
    -
    e0
    yes
    Obsolete
    3 (168 Hours)
    3
    -
    TIN LEAD
    -
    -
    -
    240
    -
    -
    30
    3
    COMMERCIAL
    1
    -
    AMPLIFIER
    -
    PNP
    PNP
    -
    -
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    -
    4MHz
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SINGLE
    R-PSFM-T3
    SINGLE
    ISOLATED
    200W
    250V
    16A
    4MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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