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MJL21195

ON Semiconductor MJL21195

Part Number:
MJL21195
Manufacturer:
ON Semiconductor
Ventron No:
3585412-MJL21195
Description:
TRANS PNP 250V 16A TO264
ECAD Model:
Datasheet:
MJL21195

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Specifications
ON Semiconductor MJL21195 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJL21195.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e0
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    240
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    200W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 8A 5V
  • Current - Collector Cutoff (Max)
    100μA
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 3.2A, 16A
  • Voltage - Collector Emitter Breakdown (Max)
    250V
  • Current - Collector (Ic) (Max)
    16A
  • Transition Frequency
    4MHz
  • Frequency - Transition
    4MHz
  • RoHS Status
    Non-RoHS Compliant
Description
MJL21195 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 8A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 3.2A, 16A.The part has a transition frequency of 4MHz.Device displays Collector Emitter Breakdown (250V maximal voltage).

MJL21195 Features
the DC current gain for this device is 25 @ 8A 5V
the vce saturation(Max) is 4V @ 3.2A, 16A
a transition frequency of 4MHz


MJL21195 Applications
There are a lot of Rochester Electronics, LLC
MJL21195 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJL21195 More Descriptions
Tube Through Hole NPN SINGLE Bipolar (BJT) Transistor 25 @ 8A 5V 100muA 200W 4MHz
TRANSISTOR,BJT,PNP,250V V(BR)CEO,16A I(C),TO-247VAR ;ROHS COMPLIANT: NO
Bipolar Transistor, PNP, 250 V, 16 A
Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 250V 16A 3-Pin (3 Tab) TO-3BPL Rail
Product Comparison
The three parts on the right have similar specifications to MJL21195.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Lifecycle Status
    Number of Pins
    Published
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Reach Compliance Code
    Current Rating
    Element Configuration
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Lead Free
    Case Connection
    Factory Lead Time
    Contact Plating
    Weight
    Frequency
    Power Dissipation
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • MJL21195
    MJL21195
    ON Semiconductor
    Through Hole
    TO-264-3, TO-264AA
    NO
    SILICON
    -65°C~150°C TJ
    Tube
    e0
    yes
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    SINGLE
    240
    30
    3
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE
    200W
    SWITCHING
    NPN
    PNP
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    250V
    16A
    4MHz
    4MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJL21196
    MJL21196
    ON Semiconductor
    Through Hole
    TO-264-3, TO-264AA
    NO
    SILICON
    -65°C~150°C TJ
    Tube
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn/Pb)
    -
    240
    30
    3
    -
    Not Qualified
    1
    -
    -
    SWITCHING
    NPN
    NPN
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    -
    -
    4MHz
    -
    Non-RoHS Compliant
    LAST SHIPMENTS (Last Updated: 1 week ago)
    3
    1995
    EAR99
    Other Transistors
    250V
    200W
    not_compliant
    16A
    Single
    4MHz
    4V
    16A
    250V
    1.4V
    400V
    5V
    25
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJL21195 vs MJL21196
  • MJL21193
    MJL21193
    ON Semiconductor
    Through Hole
    TO-264-3, TO-264AA
    NO
    SILICON
    -65°C~150°C TJ
    Tube
    e0
    yes
    Obsolete
    3 (168 Hours)
    3
    TIN LEAD
    SINGLE
    240
    30
    3
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE
    200W
    AMPLIFIER
    PNP
    PNP
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    250V
    16A
    4MHz
    4MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ISOLATED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJL21195 vs MJL21193
  • MJL21193G
    MJL21193G
    ON Semiconductor
    Through Hole
    TO-264-3, TO-264AA
    NO
    SILICON
    -65°C~150°C TJ
    Tube
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    260
    40
    3
    -
    -
    1
    -
    -
    AMPLIFIER
    PNP
    PNP
    25 @ 8A 5V
    100μA
    4V @ 3.2A, 16A
    -
    -
    4MHz
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 2 days ago)
    3
    1995
    EAR99
    Other Transistors
    -250V
    200W
    -
    -16A
    Single
    4MHz
    250V
    16A
    250V
    1.4V
    400V
    5V
    25
    Lead Free
    ISOLATED
    22 Weeks
    Tin
    4.535924g
    4MHz
    200W
    29mm
    20.3mm
    5.3mm
    No SVHC
    No
    MJL21195 vs MJL21193G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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