Fairchild/ON Semiconductor MJE3055TTU
- Part Number:
- MJE3055TTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845229-MJE3055TTU
- Description:
- TRANS NPN 60V 10A TO-220
- ECAD Model:
-
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor MJE3055TTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJE3055TTU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation75W
- Current Rating10A
- Frequency2MHz
- Base Part NumberMJE3055
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation600mW
- Power - Max75W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product2MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage525V
- Transition Frequency2MHz
- Collector Emitter Saturation Voltage1.1V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)70V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height14.2mm
- Length9.9mm
- Width4.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE3055TTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 10A volts at its maximum.
MJE3055TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJE3055TTU Applications
There are a lot of ON Semiconductor
MJE3055TTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 10A volts at its maximum.
MJE3055TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJE3055TTU Applications
There are a lot of ON Semiconductor
MJE3055TTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE3055TTU More Descriptions
Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt
MJE Series NPN 75 W 60 V 10 A Flange Mount Epitaxial Silicon Transistor-TO-220-3
TRANS NPN 60V 10A TO-220 / Trans GP BJT NPN 60V 10A 600mW 3-Pin(3 Tab) TO-220 Tube
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Sil Transistor
TRANSISTOR, NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1.1V; Current Ic Continuous a Max: 10A; Gain Bandwidth ft Typ: 2MHz; Hfe Min: 20; Termination Type: Through Hole; Transistor Type: General Purpose
MJE Series NPN 75 W 60 V 10 A Flange Mount Epitaxial Silicon Transistor-TO-220-3
TRANS NPN 60V 10A TO-220 / Trans GP BJT NPN 60V 10A 600mW 3-Pin(3 Tab) TO-220 Tube
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Sil Transistor
TRANSISTOR, NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 20hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 1.1V; Current Ic Continuous a Max: 10A; Gain Bandwidth ft Typ: 2MHz; Hfe Min: 20; Termination Type: Through Hole; Transistor Type: General Purpose
The three parts on the right have similar specifications to MJE3055TTU.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeContact PlatingPin CountCase ConnectionSurface MountPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Additional FeatureView Compare
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MJE3055TTULAST SHIPMENTS (Last Updated: 1 week ago)Through HoleThrough HoleTO-220-331.8gSILICON150°C TJTube2001e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V75W10A2MHzMJE30551Single600mW75WSWITCHING2MHzNPNNPN60V10A20 @ 4A 4V700μA8V @ 3.3A, 10A525V2MHz1.1V60V70V5V2014.2mm9.9mm4.5mmNo SVHCNoROHS3 CompliantLead Free--------- -
ACTIVE (Last Updated: 7 months ago)Through HoleThrough HoleTO-225AA, TO-126-334.535924gSILICON150°C TJTube-e3-Active1 (Unlimited)3EAR99-Other Transistors300V20.8W500mA-MJE3401Single2.8W-SWITCHING-NPNNPN300V500mA30 @ 50mA 10V100μA ICBO-300V-500mV-300V3V3010.8mm7.8mm2.7mmNo SVHCNoROHS3 CompliantLead Free8 WeeksTin3ISOLATED----
-
ACTIVE (Last Updated: 4 days ago)-Through HoleTO-225AA, TO-126-334.535924gSILICON-65°C~150°C TJBulk2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-40V40W-4A--1Single40W-SWITCHING-PNPPNP40V4A40 @ 1A 1V100μA ICBO-40V---40V4V406.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free2 Weeks-3-NO26040-
-
ACTIVE (Last Updated: 6 days ago)-Through HoleTO-225AA, TO-126-334.535924gSILICON-65°C~150°C TJBulk2003e3yesActive1 (Unlimited)3EAR99-Other Transistors300V20W500mA-MJE3401Single20W---NPNNPN300V500mA30 @ 50mA 10V100μA ICBO-300V---3V3V3011.04mm7.74mm2.66mmNo SVHCNoROHS3 CompliantLead Free11 WeeksTin3-NO--HIGH RELIABILITY
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