ON Semiconductor MJE3055T

Name: MJE3055T
Brand: ON Semiconductor
SKU: 2846541-MJE3055T
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE3055T

Manufacturer:: ON Semiconductor

Ventron No:: 2846541-MJE3055T

Description:: TRANS NPN 60V 10A TO220AB

ECAD Model:

Datasheet:: MJE3055T

Specifications

ON Semiconductor MJE3055T technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE3055T.

Voltage - Collector Emitter Breakdown (Max):
60V
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Transistor Type:
NPN
Supplier Device Package:
TO-220AB
Series:
-
Power - Max:
75W
Packaging:
Tube
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Current - Collector Cutoff (Max):
700µA
Current - Collector (Ic) (Max):
10A

Description

part#MJE3055T, Manufacturer:AMI Semiconductor / ON Semiconductor is available at ventronchip.com, see description of MJE3055T as below .use the request quote form to request MJE3055T price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for MJE3055T depending on the quantity required, availability and warehouse location.

MJE3055T More Descriptions

Trans GP BJT NPN 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE3055T Series NPN 60 V 10 A Complementary Silicon Power Transistor - TO-220
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar (Bjt) Single Transistor, Npn, 60 V, 2 Mhz, 75 W, 3 A, 400 Rohs Compliant: Yes |Stmicroelectronics MJE3055T
Transistor NPN MJE3055T SGS THOMSON Ampere=10 TO220
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 4V, 400mA, TO-220, TubeSTMicroelectronics SCT
1mA 60V 75W 10A 20@4A,4V 2MHz 8V@10A,3.3A NPN 150¡æ@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 3A; DC Current Gain hFE: 400hFE; Transistor Case Style

Product Comparison

The three parts on the right have similar specifications to MJE3055T.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Polarity

Element Configuration

Power Dissipation

Power - Max

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Max Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

RoHS Status

Lead Free

Factory Lead Time

Surface Mount

Weight

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Transistor Application

Polarity/Channel Type

REACH SVHC

Radiation Hardening

Terminal Position

Frequency

Configuration

Transition Frequency

View Compare
MJE3055T

ON Semiconductor

60V

8V @ 3.3A, 10A

NPN

TO-220AB

-

75W

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

2MHz

20 @ 4A, 4V

700µA

10A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJE3055T

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

OBSOLETE (Last Updated: 2 days ago)

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-55°C~150°C TJ

Tube

2010

Obsolete

1 (Unlimited)

150°C

-55°C

60V

75W

10A

MJE3055

NPN

Single

75W

75W

2MHz

NPN

60V

10A

20 @ 4A 4V

700μA

8V @ 3.3A, 10A

60V

60V

10A

2MHz

1.1V

80V

2MHz

70V

5V

20

9.15mm

10.28mm

4.6mm

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJE371G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 4 days ago)

-

Through Hole

TO-225AA, TO-126-3

3

-

-65°C~150°C TJ

Bulk

2000

Active

1 (Unlimited)

-

-

-40V

40W

-4A

-

-

Single

40W

-

-

PNP

40V

4A

40 @ 1A 1V

100μA ICBO

-

40V

-

-

-

-

-

-

40V

4V

40

6.35mm

6.35mm

6.35mm

ROHS3 Compliant

Lead Free

2 Weeks

NO

4.535924g

SILICON

e3

yes

3

EAR99

Tin (Sn)

Other Transistors

260

40

3

1

SWITCHING

PNP

No SVHC

No

-

-

-

-

MJE3055T vs MJE371G
MJE3439G

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 1 day ago)

-

Through Hole

TO-225AA, TO-126-3

3

-

-65°C~150°C TJ

Bulk

2005

Active

1 (Unlimited)

-

-

350V

15W

300mA

-

-

-

15W

-

15MHz

NPN

350V

300mA

15 @ 20mA 10V

20μA

500mV @ 4mA, 50mA

350V

-

-

-

500mV

-

-

450V

5V

30

6.35mm

6.35mm

6.35mm

ROHS3 Compliant

Lead Free

2 Weeks

NO

4.535924g

SILICON

e3

yes

3

EAR99

Tin (Sn)

Other Transistors

260

40

3

1

-

NPN

No SVHC

No

SINGLE

15MHz

SINGLE

15MHz

MJE3055T vs MJE3439G