ON Semiconductor MJE3055TG
- Part Number:
- MJE3055TG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845275-MJE3055TG
- Description:
- TRANS NPN 60V 10A TO220AB
- Datasheet:
- MJE3055TG
ON Semiconductor MJE3055TG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE3055TG.
- Lifecycle StatusACTIVE (Last Updated: 2 hours ago)
- Factory Lead Time8 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation75W
- Peak Reflow Temperature (Cel)260
- Current Rating10A
- Frequency2MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJE3055
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation75W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product2MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency2MHz
- Collector Emitter Saturation Voltage1.1V
- Collector Base Voltage (VCBO)70V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJE3055TG Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A maximum collector current of 10A volts is possible.
MJE3055TG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJE3055TG Applications
There are a lot of ON Semiconductor
MJE3055TG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A maximum collector current of 10A volts is possible.
MJE3055TG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz
MJE3055TG Applications
There are a lot of ON Semiconductor
MJE3055TG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJE3055TG More Descriptions
ON Semi NPN Bipolar Transistor 10 A 60 V 3-Pin TO-220AB | ON Semiconductor MJE3055TG
Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt
Trans GP BJT NPN 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 60 V 10 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 60V TO-220; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V;
1mA 60V 75W 10A 20@4A4V 2MHz 8V@10A3.3A NPN -55¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
Power Transistor, TO-220, NPN, 60V
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transist
Bipolar Transistor, Npn, 60V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:10A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi MJE3055TG.
Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt
Trans GP BJT NPN 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 60 V 10 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 60V TO-220; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V;
1mA 60V 75W 10A 20@4A4V 2MHz 8V@10A3.3A NPN -55¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
Power Transistor, TO-220, NPN, 60V
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transist
Bipolar Transistor, Npn, 60V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:10A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi MJE3055TG.
The three parts on the right have similar specifications to MJE3055TG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyMax Breakdown VoltageFrequency - TransitionContact PlatingView Compare
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MJE3055TGACTIVE (Last Updated: 2 hours ago)8 WeeksThrough HoleTO-220-3NO34.535924gSILICON-55°C~150°C TJTube2003e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V75W26010A2MHz40MJE305531Single75WCOLLECTORSWITCHING2MHzNPNNPN60V10A20 @ 4A 4V700μA8V @ 3.3A, 10A60V2MHz1.1V70V5V2015.748mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free-------------
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OBSOLETE (Last Updated: 2 days ago)-Through HoleTO-220-3-3---55°C~150°C TJTube2010--Obsolete1 (Unlimited)----60V75W-10A--MJE3055--Single75W--2MHz-NPN60V10A20 @ 4A 4V700μA8V @ 3.3A, 10A60V-1.1V70V5V209.15mm10.28mm4.6mm--Non-RoHS CompliantContains LeadThrough HoleTO-220AB150°C-55°CNPN75W60V10A2MHz80V2MHz-
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ACTIVE (Last Updated: 7 months ago)8 WeeksThrough HoleTO-225AA, TO-126-3-34.535924gSILICON150°C TJTube-e3-Active1 (Unlimited)3EAR99-Other Transistors300V20.8W-500mA--MJE34031Single2.8WISOLATEDSWITCHING-NPNNPN300V500mA30 @ 50mA 10V100μA ICBO-300V-500mV300V3V3010.8mm7.8mm2.7mmNo SVHCNoROHS3 CompliantLead FreeThrough Hole----------Tin
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ACTIVE (Last Updated: 4 days ago)2 WeeksThrough HoleTO-225AA, TO-126-3NO34.535924gSILICON-65°C~150°C TJBulk2000e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-40V40W260-4A-40-31Single40W-SWITCHING-PNPPNP40V4A40 @ 1A 1V100μA ICBO-40V--40V4V406.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free------------
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