MJE3055TG

ON Semiconductor MJE3055TG

Part Number:
MJE3055TG
Manufacturer:
ON Semiconductor
Ventron No:
2845275-MJE3055TG
Description:
TRANS NPN 60V 10A TO220AB
ECAD Model:
Datasheet:
MJE3055TG

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Specifications
ON Semiconductor MJE3055TG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE3055TG.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 hours ago)
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    60V
  • Max Power Dissipation
    75W
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    10A
  • Frequency
    2MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJE3055
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    75W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    2MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 4V
  • Current - Collector Cutoff (Max)
    700μA
  • Vce Saturation (Max) @ Ib, Ic
    8V @ 3.3A, 10A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    2MHz
  • Collector Emitter Saturation Voltage
    1.1V
  • Collector Base Voltage (VCBO)
    70V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    20
  • Height
    15.748mm
  • Length
    10.2616mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJE3055TG Overview
This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 8V @ 3.3A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 2MHz.A maximum collector current of 10A volts is possible.

MJE3055TG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz


MJE3055TG Applications
There are a lot of ON Semiconductor
MJE3055TG applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJE3055TG More Descriptions
ON Semi NPN Bipolar Transistor 10 A 60 V 3-Pin TO-220AB | ON Semiconductor MJE3055TG
Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt
Trans GP BJT NPN 60V 10A 75000mW 3-Pin(3 Tab) TO-220AB Tube
MJE Series 60 V 10 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BIPOLAR Transistor, NPN, 60V TO-220; Tra; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V;
1mA 60V 75W 10A 20@4A4V 2MHz 8V@10A3.3A NPN -55¡Í~ 150¡Í@(Tj) TO-220-3 Bipolar Transistors - BJT ROHS
Power Transistor, TO-220, NPN, 60V
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 75W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transist
Bipolar Transistor, Npn, 60V To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:60V; Continuous Collector Current:10A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:2Mhz Rohs Compliant: Yes |Onsemi MJE3055TG.
Product Comparison
The three parts on the right have similar specifications to MJE3055TG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Max Frequency
    Max Breakdown Voltage
    Frequency - Transition
    Contact Plating
    View Compare
  • MJE3055TG
    MJE3055TG
    ACTIVE (Last Updated: 2 hours ago)
    8 Weeks
    Through Hole
    TO-220-3
    NO
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tube
    2003
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    60V
    75W
    260
    10A
    2MHz
    40
    MJE3055
    3
    1
    Single
    75W
    COLLECTOR
    SWITCHING
    2MHz
    NPN
    NPN
    60V
    10A
    20 @ 4A 4V
    700μA
    8V @ 3.3A, 10A
    60V
    2MHz
    1.1V
    70V
    5V
    20
    15.748mm
    10.2616mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJE3055T
    OBSOLETE (Last Updated: 2 days ago)
    -
    Through Hole
    TO-220-3
    -
    3
    -
    -
    -55°C~150°C TJ
    Tube
    2010
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    60V
    75W
    -
    10A
    -
    -
    MJE3055
    -
    -
    Single
    75W
    -
    -
    2MHz
    -
    NPN
    60V
    10A
    20 @ 4A 4V
    700μA
    8V @ 3.3A, 10A
    60V
    -
    1.1V
    70V
    5V
    20
    9.15mm
    10.28mm
    4.6mm
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    TO-220AB
    150°C
    -55°C
    NPN
    75W
    60V
    10A
    2MHz
    80V
    2MHz
    -
  • MJE340
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Through Hole
    TO-225AA, TO-126-3
    -
    3
    4.535924g
    SILICON
    150°C TJ
    Tube
    -
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    300V
    20.8W
    -
    500mA
    -
    -
    MJE340
    3
    1
    Single
    2.8W
    ISOLATED
    SWITCHING
    -
    NPN
    NPN
    300V
    500mA
    30 @ 50mA 10V
    100μA ICBO
    -
    300V
    -
    500mV
    300V
    3V
    30
    10.8mm
    7.8mm
    2.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Tin
  • MJE371G
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Through Hole
    TO-225AA, TO-126-3
    NO
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Bulk
    2000
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -40V
    40W
    260
    -4A
    -
    40
    -
    3
    1
    Single
    40W
    -
    SWITCHING
    -
    PNP
    PNP
    40V
    4A
    40 @ 1A 1V
    100μA ICBO
    -
    40V
    -
    -
    40V
    4V
    40
    6.35mm
    6.35mm
    6.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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