ON Semiconductor MJE340G

Name: MJE340G
Brand: ON Semiconductor
SKU: 2463552-MJE340G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJE340G

Manufacturer:: ON Semiconductor

Ventron No:: 2463552-MJE340G

Description:: TRANS NPN 300V 0.5A TO225AA

ECAD Model:

Datasheet:: MJE340G

Specifications

ON Semiconductor MJE340G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJE340G.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
11 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
20W
Current Rating
500mA
Base Part Number
MJE340
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA ICBO
Collector Emitter Breakdown Voltage
300V
Collector Base Voltage (VCBO)
3V
Emitter Base Voltage (VEBO)
3V
hFE Min
30
Height
11.04mm
Length
7.74mm
Width
2.66mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJE340G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.Keeping the emitter base voltage at 3V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 500mA volts.

MJE340G Features
the DC current gain for this device is 30 @ 50mA 10V
the emitter base voltage is kept at 3V
the current rating of this device is 500mA

MJE340G Applications
There are a lot of ON Semiconductor
MJE340G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJE340G More Descriptions

ON Semi NPN High Voltage Bipolar Transistor 0.5 A 300 V 3-Pin TO-225 | ON Semiconductor MJE340G
Trans GP BJT NPN 300V 0.5A 20000mW 3-Pin(3 Tab) TO-225 Box
Trans General Purpose BJT NPN 300 Volt 0.5A 3-Pin (3 Tab) TO-225
Medium Power NPN Bipolar Power Transistor
MJE Series 300 V 500 mA Plastic Medium Power NPN Silicon Transistor - TO-225
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
TRANSISTOR, NPN, TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 500mA; DC Current Gain hFE: 240hFE; Transistor Case Styl
Bipolar Transistor, Npn, 300V, To-225; Transistor Polarity:Npn; Collector Emitter Voltage Max:300V; Continuous Collector Current:500Ma; Power Dissipation:20W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJE340G

Product Comparison

The three parts on the right have similar specifications to MJE340G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Case Connection

Transistor Application

Gain Bandwidth Product

Vce Saturation (Max) @ Ib, Ic

Transition Frequency

Collector Emitter Saturation Voltage

Mount

Power - Max

Max Breakdown Voltage

View Compare
MJE340G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

11 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

HIGH RELIABILITY

Other Transistors

300V

20W

500mA

MJE340

3

1

Single

20W

NPN

NPN

300V

500mA

30 @ 50mA 10V

100μA ICBO

300V

3V

3V

30

11.04mm

7.74mm

2.66mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJE3055TG

ON Semiconductor

ACTIVE (Last Updated: 2 hours ago)

8 Weeks

-

Through Hole

TO-220-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

2003

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

60V

75W

10A

MJE3055

3

1

Single

75W

NPN

NPN

60V

10A

20 @ 4A 4V

700μA

60V

70V

5V

20

15.748mm

10.2616mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

260

2MHz

40

COLLECTOR

SWITCHING

2MHz

8V @ 3.3A, 10A

2MHz

1.1V

-

-

-

MJE340G vs MJE3055TG
MJE3055TTU

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Through Hole

TO-220-3

-

3

1.8g

SILICON

150°C TJ

Tube

2001

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Other Transistors

60V

75W

10A

MJE3055

-

1

Single

600mW

NPN

NPN

60V

10A

20 @ 4A 4V

700μA

525V

70V

5V

20

14.2mm

9.9mm

4.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

-

2MHz

-

-

SWITCHING

2MHz

8V @ 3.3A, 10A

2MHz

1.1V

Through Hole

75W

60V

MJE340G vs MJE3055TTU
MJE371G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

-

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2000

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

-40V

40W

-4A

-

3

1

Single

40W

PNP

PNP

40V

4A

40 @ 1A 1V

100μA ICBO

40V

40V

4V

40

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin (Sn)

260

-

40

-

SWITCHING

-

-

-

-

-

-

-

MJE340G vs MJE371G