MJD32CT4G

ON Semiconductor MJD32CT4G

Part Number:
MJD32CT4G
Manufacturer:
ON Semiconductor
Ventron No:
2845730-MJD32CT4G
Description:
TRANS PNP 100V 3A DPAK
ECAD Model:
Datasheet:
MJD32CT4G

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Specifications
ON Semiconductor MJD32CT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD32CT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Max Power Dissipation
    1.56W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -3A
  • Frequency
    3MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD32
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.56W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    3MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 3A 4V
  • Current - Collector Cutoff (Max)
    50μA
  • Vce Saturation (Max) @ Ib, Ic
    1.2V @ 375mA, 3A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
    1.2V
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    25
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD32CT4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.

MJD32CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz


MJD32CT4G Applications
There are a lot of ON Semiconductor
MJD32CT4G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD32CT4G More Descriptions
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.56 W Surface Mount DPAK
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
ON Semi MJD32CT4G PNP Bipolar Transistor; 3 A; 100 V; 3-Pin DPAK
3.0 A, 100 V PNP Bipolar Power Transistor
100V 1.56W 10@3A,4V 3A PNP TO-252 Bipolar Transistors - BJT ROHS
MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Bipolar Transistors - BJT 3A 100V 15W PNP
Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:3MHz; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MJD32CT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Terminal Position
    Polarity
    Configuration
    JEDEC-95 Code
    View Compare
  • MJD32CT4G
    MJD32CT4G
    ACTIVE (Last Updated: 1 week ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2001
    e3
    yes
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    Other Transistors
    -100V
    1.56W
    GULL WING
    260
    -3A
    3MHz
    40
    MJD32
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    AMPLIFIER
    3MHz
    PNP
    PNP
    100V
    3A
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    100V
    3MHz
    1.2V
    100V
    100V
    5V
    25
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • MJD361T4-A
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Other Transistors
    -
    15W
    GULL WING
    260
    -
    -
    -
    MJD36
    3
    R-PSSO-G2
    1
    -
    15W
    COLLECTOR
    SWITCHING
    -
    -
    PNP
    60V
    3A
    60 @ 1A 4V
    20μA ICBO
    900mV @ 150mA, 3A
    60V
    -
    -
    60V
    60V
    5V
    30
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    Surface Mount
    Matte Tin (Sn) - annealed
    SINGLE
    NPN, PNP
    SINGLE
    TO-252AA
  • MJD32CT4
    -
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    4.535924g
    SILICON
    150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    2
    -
    EAR99
    Other Transistors
    -100V
    15W
    GULL WING
    260
    -3A
    -
    30
    MJD32
    3
    R-PSSO-G2
    1
    Single
    15W
    COLLECTOR
    SWITCHING
    -
    PNP
    PNP
    100V
    3A
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    100V
    -
    -1.2V
    100V
    100V
    5V
    20
    2.4mm
    6.6mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Surface Mount
    -
    -
    -
    -
    TO-252AA
  • MJD32RLG
    ACTIVE (Last Updated: 1 week ago)
    8 Weeks
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    -
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    EAR99
    Other Transistors
    -40V
    1.56W
    GULL WING
    260
    -3A
    3MHz
    40
    MJD32
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    AMPLIFIER
    3MHz
    PNP
    PNP
    40V
    3A
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    40V
    3MHz
    1.2V
    -
    40V
    5V
    25
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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