ON Semiconductor MJD32CT4G
- Part Number:
- MJD32CT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2845730-MJD32CT4G
- Description:
- TRANS PNP 100V 3A DPAK
- Datasheet:
- MJD32CT4G
ON Semiconductor MJD32CT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD32CT4G.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD32
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD32CT4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.
MJD32CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CT4G Applications
There are a lot of ON Semiconductor
MJD32CT4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 375mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 3A volts.
MJD32CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CT4G Applications
There are a lot of ON Semiconductor
MJD32CT4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD32CT4G More Descriptions
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.56 W Surface Mount DPAK
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
ON Semi MJD32CT4G PNP Bipolar Transistor; 3 A; 100 V; 3-Pin DPAK
3.0 A, 100 V PNP Bipolar Power Transistor
100V 1.56W 10@3A,4V 3A PNP TO-252 Bipolar Transistors - BJT ROHS
MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Bipolar Transistors - BJT 3A 100V 15W PNP
Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:3MHz; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
ON Semi MJD32CT4G PNP Bipolar Transistor; 3 A; 100 V; 3-Pin DPAK
3.0 A, 100 V PNP Bipolar Power Transistor
100V 1.56W 10@3A,4V 3A PNP TO-252 Bipolar Transistors - BJT ROHS
MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Bipolar Transistors - BJT 3A 100V 15W PNP
Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:3MHz; DC Current Gain hFE Min:10hFE RoHS Compliant: Yes
The three parts on the right have similar specifications to MJD32CT4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishTerminal PositionPolarityConfigurationJEDEC-95 CodeView Compare
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MJD32CT4GACTIVE (Last Updated: 1 week ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES34.535924gSILICON-65°C~150°C TJTape & Reel (TR)2001e3yesActive1 (Unlimited)2SMD/SMTEAR99Other Transistors-100V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNPPNP100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V100V5V252.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free-------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3-SILICON150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)2-EAR99Other Transistors-15WGULL WING260---MJD363R-PSSO-G21-15WCOLLECTORSWITCHING--PNP60V3A60 @ 1A 4V20μA ICBO900mV @ 150mA, 3A60V--60V60V5V30----NoROHS3 Compliant-Surface MountMatte Tin (Sn) - annealedSINGLENPN, PNPSINGLETO-252AA
-
-8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-34.535924gSILICON150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)2-EAR99Other Transistors-100V15WGULL WING260-3A-30MJD323R-PSSO-G21Single15WCOLLECTORSWITCHING-PNPPNP100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V--1.2V100V100V5V202.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount----TO-252AA
-
ACTIVE (Last Updated: 1 week ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3-SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2-EAR99Other Transistors-40V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNPPNP40V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A40V3MHz1.2V-40V5V25----NoROHS3 CompliantLead Free-Tin (Sn)----
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