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MJD32CT4-A

STMicroelectronics MJD32CT4-A

Part Number:
MJD32CT4-A
Manufacturer:
STMicroelectronics
Ventron No:
2463422-MJD32CT4-A
Description:
TRANS PNP 100V 3A DPAK
ECAD Model:
Datasheet:
MJD32CT4-A

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Specifications
STMicroelectronics MJD32CT4-A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD32CT4-A.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    15W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MJD32
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    15W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 3A 4V
  • Current - Collector Cutoff (Max)
    50μA
  • JEDEC-95 Code
    TO-252AA
  • Vce Saturation (Max) @ Ib, Ic
    1.2V @ 375mA, 3A
  • Collector Emitter Breakdown Voltage
    100V
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MJD32CT4-A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

MJD32CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V


MJD32CT4-A Applications
There are a lot of STMicroelectronics
MJD32CT4-A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD32CT4-A More Descriptions
Trans GP BJT PNP 100V 3A 15000mW Automotive 3-Pin(2 Tab) DPAK T/R
MJD32C Series PNP 100 V 3A Surface Mount Low Voltage Power Transistor - TO-252
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Bipolar Transistors - BJT LO PWR PNP PW TRANS
Transistor, Pnp, -100V, -3A, To-252; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-100V; Transition Frequency Ft:-; Power Dissipation Pd:15W; Dc Collector Current:-3A; Dc Current Gain Hfe:10Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics MJD32CT4-A
Product Comparison
The three parts on the right have similar specifications to MJD32CT4-A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Terminal Finish
    Terminal Position
    Polarity
    Configuration
    hFE Min
    Surface Mount
    Published
    Voltage - Rated DC
    Current Rating
    Frequency
    Gain Bandwidth Product
    Transition Frequency
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    REACH SVHC
    View Compare
  • MJD32CT4-A
    MJD32CT4-A
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    15W
    GULL WING
    260
    30
    MJD32
    3
    R-PSSO-G2
    1
    Single
    15W
    COLLECTOR
    SWITCHING
    PNP
    PNP
    100V
    3A
    10 @ 3A 4V
    50μA
    TO-252AA
    1.2V @ 375mA, 3A
    100V
    100V
    100V
    5V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD361T4-A
    MJD361T4-A
    STMicroelectronics
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    15W
    GULL WING
    260
    -
    MJD36
    3
    R-PSSO-G2
    1
    -
    15W
    COLLECTOR
    SWITCHING
    -
    PNP
    60V
    3A
    60 @ 1A 4V
    20μA ICBO
    TO-252AA
    900mV @ 150mA, 3A
    60V
    60V
    60V
    5V
    No
    ROHS3 Compliant
    -
    yes
    Matte Tin (Sn) - annealed
    SINGLE
    NPN, PNP
    SINGLE
    30
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJD32CT4-A vs MJD361T4-A
  • MJD31CG
    MJD31CG
    ON Semiconductor
    ACTIVE (Last Updated: 4 hours ago)
    8 Weeks
    Tin
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    1.56W
    GULL WING
    260
    40
    MJD31
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    AMPLIFIER
    NPN
    NPN
    100V
    3A
    10 @ 3A 4V
    50μA
    -
    1.2V @ 375mA, 3A
    100V
    -
    100V
    5V
    No
    ROHS3 Compliant
    Lead Free
    yes
    -
    -
    -
    -
    25
    YES
    2005
    100V
    3A
    3MHz
    3MHz
    3MHz
    1.2V
    2.3876mm
    6.7056mm
    6.223mm
    No SVHC
    MJD32CT4-A vs MJD31CG
  • MJD32RLG
    MJD32RLG
    ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    8 Weeks
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -65°C~150°C TJ
    Tape & Reel (TR)
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Other Transistors
    1.56W
    GULL WING
    260
    40
    MJD32
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    AMPLIFIER
    PNP
    PNP
    40V
    3A
    10 @ 3A 4V
    50μA
    -
    1.2V @ 375mA, 3A
    40V
    -
    40V
    5V
    No
    ROHS3 Compliant
    Lead Free
    yes
    Tin (Sn)
    -
    -
    -
    25
    YES
    2005
    -40V
    -3A
    3MHz
    3MHz
    3MHz
    1.2V
    -
    -
    -
    -
    MJD32CT4-A vs MJD32RLG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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