ON Semiconductor MJD32CRLG
- Part Number:
- MJD32CRLG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463931-MJD32CRLG
- Description:
- TRANS PNP 100V 3A DPAK
- Datasheet:
- MJD32CRLG
ON Semiconductor MJD32CRLG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD32CRLG.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD32
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min10
- Height2.38mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD32CRLG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 3A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3A volts at its maximum.
MJD32CRLG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CRLG Applications
There are a lot of ON Semiconductor
MJD32CRLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 3A 4V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3A volts at its maximum.
MJD32CRLG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CRLG Applications
There are a lot of ON Semiconductor
MJD32CRLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD32CRLG More Descriptions
ON Semi MJD32CRLG PNP Bipolar Transistor, 3 A, 100 V, 3-Pin DPAK | ON Semiconductor MJD32CRLG
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
3.0 A, 100 V PNP Bipolar Power Transistor
MJD32 Series PNP 100 V 1.56 W Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 3A 1560mW Automotive 3-Pin(2 Tab) DPAK T/R
100V 15W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) DPAK Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 3A 100V 15W PNP
Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:3Mhz; Operating Temperature Max:150°C Rohs Compliant: Yes |Onsemi MJD32CRLG.
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
3.0 A, 100 V PNP Bipolar Power Transistor
MJD32 Series PNP 100 V 1.56 W Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 3A 1560mW Automotive 3-Pin(2 Tab) DPAK T/R
100V 15W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) DPAK Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 3A 100V 15W PNP
Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:3Mhz; Operating Temperature Max:150°C Rohs Compliant: Yes |Onsemi MJD32CRLG.
The three parts on the right have similar specifications to MJD32CRLG.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountWeightREACH SVHCVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MJD32CRLGACTIVE (Last Updated: 1 day ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors-100V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNPPNP100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V100V5V102.38mm6.73mm6.22mmNoROHS3 CompliantLead Free------------------
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LAST SHIPMENTS (Last Updated: 5 days ago)6 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON150°C TJTape & Reel (TR)2001e3yesObsolete1 (Unlimited)2EAR99Other Transistors-100V1.56WGULL WING--3A3MHz-MJD32-R-PSSO-G21Single1.56W-AMPLIFIER3MHzPNPPNP100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz-1.2V100V-100V-5V102.3mm6.6mm6.1mmNoRoHS CompliantLead FreeSurface Mount260.37mgNo SVHC--------------
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---------------------------------------------------------100V1.2V @ 375mA, 3ANPNDPAK-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-10 @ 3A, 4V50µA3A
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---------------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA
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