ON Semiconductor MJD31T4G

Name: MJD31T4G
Brand: ON Semiconductor
SKU: 2462880-MJD31T4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD31T4G

Manufacturer:: ON Semiconductor

Ventron No:: 2462880-MJD31T4G

Description:: TRANS NPN 40V 3A DPAK

ECAD Model:

Datasheet:: MJD31T4G

Specifications

ON Semiconductor MJD31T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31T4G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD31
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD31T4G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

MJD31T4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

MJD31T4G Applications
There are a lot of ON Semiconductor
MJD31T4G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD31T4G More Descriptions

ON Semi MJD31T4G NPN Bipolar Transistor, 3 A, 40 V, 3-Pin DPAK | ON Semiconductor MJD31T4G
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK
3.0 A, 40 V NPN Bipolar Power Transistor
MJD Series 40 V 3 A NPN Complementary Power Transistor - TO-252-3
Trans GP BJT NPN 40V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Bipolar Transistors - BJT 3A 40V 15W NPN
TRANSISTOR, NPN, 40V, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case S

Product Comparison

The three parts on the right have similar specifications to MJD31T4G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Mount

Weight

JEDEC-95 Code

REACH SVHC

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
MJD31T4G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

40V

1.56W

GULL WING

260

3A

3MHz

40

MJD31

3

R-PSSO-G2

1

Single

1.56W

COLLECTOR

AMPLIFIER

3MHz

NPN

NPN

40V

3A

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

40V

3MHz

1.2V

40V

40V

5V

25

2.38mm

6.73mm

6.22mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
MJD32CT4

STMicroelectronics

-

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

3

SILICON

150°C TJ

Tape & Reel (TR)

-

e3

-

Active

1 (Unlimited)

2

EAR99

Other Transistors

-100V

15W

GULL WING

260

-3A

-

30

MJD32

3

R-PSSO-G2

1

Single

15W

COLLECTOR

SWITCHING

-

PNP

PNP

100V

3A

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

100V

-

-1.2V

100V

100V

5V

20

2.4mm

6.6mm

6.2mm

No

ROHS3 Compliant

Lead Free

Surface Mount

4.535924g

TO-252AA

No SVHC

-

-

-

-

-

MJD31T4G vs MJD32CT4
MJD32CTM

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

150°C TJ

Tape & Reel (TR)

-

-

-

Last Time Buy

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP

-

-

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

D-Pak

1.56W

100V

3A

3MHz

MJD31T4G vs MJD32CTM
MJD31CG

ON Semiconductor

ACTIVE (Last Updated: 4 hours ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

100V

1.56W

GULL WING

260

3A

3MHz

40

MJD31

3

R-PSSO-G2

1

Single

1.56W

COLLECTOR

AMPLIFIER

3MHz

NPN

NPN

100V

3A

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

100V

3MHz

1.2V

-

100V

5V

25

2.3876mm

6.7056mm

6.223mm

No

ROHS3 Compliant

Lead Free

-

-

-

No SVHC

-

-

-

-

-

MJD31T4G vs MJD31CG