Fairchild/ON Semiconductor MJD31CTF
- Part Number:
- MJD31CTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2463424-MJD31CTF
- Description:
- TRANS NPN 100V 3A DPAK
- ECAD Model:
-
- Datasheet:
- MJD31C
Fairchild/ON Semiconductor MJD31CTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJD31CTF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1.56W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)3A
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
MJD31CTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.This product comes in a D-Pak device package from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).
MJD31CTF Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of D-Pak
MJD31CTF Applications
There are a lot of Rochester Electronics, LLC
MJD31CTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.This product comes in a D-Pak device package from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).
MJD31CTF Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of D-Pak
MJD31CTF Applications
There are a lot of Rochester Electronics, LLC
MJD31CTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD31CTF More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 10 @ 3A 4V 50muA 1.56W 3MHz
3.0 A, 100 V NPN Bipolar Power Transistor
MJD Series NPN 1.56 W 100 V 3 A SMT Epitaxial Silicon Transistor - TO-252-3
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
3.0 A, 100 V NPN Bipolar Power Transistor
MJD Series NPN 1.56 W 100 V 3 A SMT Epitaxial Silicon Transistor - TO-252-3
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Bipolar Transistors - BJT NPN Epitaxial Sil
Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
The three parts on the right have similar specifications to MJD31CTF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminal FinishTerminal PositionQualification StatusConfigurationView Compare
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MJD31CTFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak150°C TJTape & Reel (TR)Last Time Buy1 (Unlimited)1.56WNPN10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzROHS3 Compliant------------------------------------------------ -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak150°C TJTape & Reel (TR)Last Time Buy1 (Unlimited)1.56WPNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzNon-RoHS Compliant-----------------------------------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--65°C~150°C TJTubeActive1 (Unlimited)-NPN10 @ 3A 4V50μA1.2V @ 375mA, 3A---ROHS3 CompliantACTIVE (Last Updated: 4 hours ago)8 WeeksTinYES3SILICON2005e3yes2EAR99Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPN100V3A100V3MHz1.2V100V5V252.3876mm6.7056mm6.223mmNo SVHCNoLead Free----
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-150°C TJTape & Reel (TR)Active1 (Unlimited)1.25WPNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzROHS3 Compliant-12 Weeks-YES-SILICON2007e3yes3EAR99---GULL WING260--10MJD32C3R-PSSO-G31---SWITCHING-PNP---3MHz----------Matte Tin (Sn)SINGLENot QualifiedSINGLE
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