ON Semiconductor MJD31C1G

Name: MJD31C1G
Brand: ON Semiconductor
SKU: 2845317-MJD31C1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD31C1G

Manufacturer:: ON Semiconductor

Ventron No:: 2845317-MJD31C1G

Description:: TRANS NPN 100V 3A IPAK

ECAD Model:

Datasheet:: MJD31C1G

Specifications

ON Semiconductor MJD31C1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31C1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.56W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD31
Pin Count
4
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
10V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
6.22mm
Length
6.73mm
Width
2.38mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD31C1G Overview
In this device, the DC current gain is 10 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

MJD31C1G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

MJD31C1G Applications
There are a lot of ON Semiconductor
MJD31C1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD31C1G More Descriptions

ON Semi MJD31C1G NPN Bipolar Transistor, 3 A, 100 V, 3-Pin IPAK | ON Semiconductor MJD31C1G
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
3.0 A, 100 V NPN Bipolar Power Transistor
MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-262-3
Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) IPAK Rail - Rail/Tube
100V 15W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~ 150¡Í@(Tj) IPAK Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 3A 100V 15W NPN
Bipolar Transistor, Npn, 100V Ipak-4; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhzrohs Compliant: Yes |Onsemi MJD31C1G
TRANSISTOR, NPN, 100V, 3A, DPAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Ca

Product Comparison

The three parts on the right have similar specifications to MJD31C1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Terminal Finish

Terminal Position

Terminal Form

Qualification Status

Configuration

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
MJD31C1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

NO

4

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

100V

1.56W

260

3A

3MHz

40

MJD31

4

R-PSIP-T3

1

Single

1.56W

COLLECTOR

AMPLIFIER

3MHz

NPN

NPN

100V

3A

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

10V

3MHz

1.2V

100V

100V

5V

25

6.22mm

6.73mm

2.38mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD32CTM

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

150°C TJ

Tape & Reel (TR)

-

-

-

Last Time Buy

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP

-

-

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

D-Pak

1.56W

100V

3A

3MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD31C1G vs MJD32CTM
MJD32C-TP

Micro Commercial Co

-

12 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

-

SILICON

150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

-

-

-

260

-

-

10

MJD32C

3

R-PSSO-G3

1

-

-

-

SWITCHING

-

PNP

PNP

-

-

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

-

3MHz

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

1.25W

100V

3A

3MHz

Matte Tin (Sn)

SINGLE

GULL WING

Not Qualified

SINGLE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD31C1G vs MJD32C-TP
MJD340T4

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

300V

-

NPN

D-Pak

-

15W

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

150°C (TJ)

Surface Mount

-

30 @ 50mA, 10V

100µA (ICBO)

500mA

MJD31C1G vs MJD340T4

Certification

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Fairchild/ON Semiconductor

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STMicroelectronics

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MJD31C1G Specification

Part Number	Manufacturers	Description	Stock	Price
MJD31C1G DISTI #	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(3 Tab) I RoHS: Compliant	75	1 $0.323 10 $0.2822 100 $0.1954 1000 $0.1566 2500 $0.1394 10000 $0.1313 25000 $0.1255 50000 $0.1229
MJD31C1G DISTI #	ON Semiconductor	TRANS NPN 100V 3A IPAK RoHS: Compliant	825	1 $0.46 75 $0.36867 150 $0.29487 525 $0.2317 1050 $0.17904
MJD31C1G DISTI #	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(3 Tab) I RoHS: Compliant	3375	3375 $0.1616
MJD31C1G DISTI #	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(3 Tab) I RoHS: Compliant	75	46 $0.2822
MJD31C1G DISTI #	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) IPAK Rail (A RoHS: Compliant	0
MJD31C1G DISTI #	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) IPAK Rail - RoHS: Compliant	0	3375 $0.1309 3525 $0.1299 6900 $0.1279 16875 $0.1259 33750 $0.1229
MJD31C1G DISTI #	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) IPAK Rail - RoHS: Compliant	0	1 $0.44 10 $0.363 100 $0.221 500 $0.196 1000 $0.171 2500 $0.146 10000 $0.136
MJD31C1G DISTI #	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 100V IPAK-4, Transistor	2026	1 $0.122 10 $0.122 100 $0.122 500 $0.122 1000 $0.122 2500 $0.122 10000 $0.122
MJD31C1G DISTI #	ON Semiconductor	ON Semi MJD31C1G NPN Bipolar Transistor, 3 A, 10 RoHS: Compliant	0	30 $0.44 75 $0.436 150 $0.431 300 $0.399
MJD31C1G DISTI #	ON Semiconductor	RoHS: Not Compliant	1175	1 $0.2 25 $0.19 100 $0.18 500 $0.17 1000 $0.16
MJD31C1G DISTI #	ON Semiconductor	Bipolar Transistors - BJT 3A 100V 15W NPN RoHS: Compliant	1663	1 $0.44 10 $0.363 100 $0.221 1000 $0.171 2500 $0.146 10000 $0.136 25000 $0.129 50000 $0.126
MJD31C1 DISTI #	ON Semiconductor	Bipolar Transistors - BJT 3A 100V 15W NPN RoHS: Not Compliant	0
MJD31C1G DISTI #	ON Semiconductor	NPN POWER TRANSISTOR 100V 3A 15W IPAK, TU	2100	15 $0.268
MJD31C1G DISTI #	ON Semiconductor	Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(3 RoHS: Compliant	75	10 $0.2822
MJD31C1G DISTI #	ON Semiconductor	TRANSISTOR, NPN, 100V, 3A, DPAK RoHS: Compliant	0	1 $0.697 10 $0.575 100 $0.35 1000 $0.271 2500 $0.231 10000 $0.216 25000 $0.204 50000 $0.2
MJD31C1G. DISTI #	ON Semiconductor	RoHS: Compliant	2026	1 $0.697 10 $0.575 100 $0.35 1000 $0.271 2500 $0.231 10000 $0.216 25000 $0.204 50000 $0.2

MJD31C1~~(2)~~
MJD31C~~(24)~~
MJD31~~(28)~~
MJD3~~(81)~~
MJD~~(114)~~

ON Semiconductor MJD31C1G

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