ON Semiconductor MJD31C1

Name: MJD31C1
Brand: ON Semiconductor
SKU: 2472167-MJD31C1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD31C1

Manufacturer:: ON Semiconductor

Ventron No:: 2472167-MJD31C1

Description:: TRANS NPN 100V 3A IPAK

ECAD Model:

Datasheet:: MJD31C1

Specifications

ON Semiconductor MJD31C1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31C1.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2009
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.56W
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
3A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
MJD31
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1.2V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

MJD31C1 Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 3A volts is possible.

MJD31C1 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

MJD31C1 Applications
There are a lot of ON Semiconductor
MJD31C1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD31C1 More Descriptions

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
TRANS NPN 100V 3A IPAK
RES SMD 56.2 OHM 1% 1/2W 1206

Product Comparison

The three parts on the right have similar specifications to MJD31C1.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Contact Plating

Weight

Pbfree Code

Terminal Form

Frequency

JESD-30 Code

Power Dissipation

Max Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Surface Mount

View Compare
MJD31C1

ON Semiconductor

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

SILICON

-65°C~150°C TJ

Tube

2009

e0

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

8541.29.00.95

Other Transistors

100V

1.56W

240

not_compliant

3A

30

MJD31

3

Not Qualified

1

Single

COLLECTOR

AMPLIFIER

3MHz

NPN

NPN

1.2V

3A

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

100V

3MHz

1.2V

100V

5V

25

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD32CTF

Fairchild/ON Semiconductor

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

150°C TJ

Tape & Reel (TR)

2001

e3

Obsolete

1 (Unlimited)

2

EAR99

-

-

Other Transistors

-100V

1.56W

-

-

-3A

-

MJD32

-

-

1

Single

-

AMPLIFIER

3MHz

PNP

PNP

100V

3A

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

100V

3MHz

-1.2V

-100V

-5V

10

RoHS Compliant

Lead Free

LAST SHIPMENTS (Last Updated: 5 days ago)

6 Weeks

Tin

260.37mg

yes

GULL WING

3MHz

R-PSSO-G2

1.56W

100V

2.3mm

6.6mm

6.1mm

No SVHC

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD31C1 vs MJD32CTF
MJD31CT4

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

1.2V @ 375mA, 3A

NPN

DPAK

-

15W

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

150°C (TJ)

Surface Mount

-

10 @ 3A, 4V

50µA

3A

-

MJD31C1 vs MJD31CT4
MJD31CG

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-65°C~150°C TJ

Tube

2005

e3

Active

1 (Unlimited)

2

EAR99

-

-

Other Transistors

100V

1.56W

260

-

3A

40

MJD31

3

-

1

Single

COLLECTOR

AMPLIFIER

3MHz

NPN

NPN

100V

3A

10 @ 3A 4V

50μA

1.2V @ 375mA, 3A

100V

3MHz

1.2V

100V

5V

25

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 4 hours ago)

8 Weeks

Tin

-

yes

GULL WING

3MHz

R-PSSO-G2

1.56W

-

2.3876mm

6.7056mm

6.223mm

No SVHC

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

YES

MJD31C1 vs MJD31CG

Certification

Related parts for MJD31C1

MJD340TF

Fairchild/ON Semiconductor

TRANS NPN 300V 0.5A DPAK
MJD361T4-A

STMicroelectronics

TRANS PNP 60V 3A DPAK
MJD32CTF

Fairchild/ON Semiconductor

TRANS PNP 100V 3A DPAK
MJD32CT4

STMicroelectronics

TRANS PNP 100V 3A DPAK
MJD31CT4

STMicroelectronics

TRANS NPN 100V 3A DPAK
MJD32CTM

Fairchild/ON Semiconductor

TRANS PNP 100V 3A DPAK
MJD31CG

ON Semiconductor

TRANS NPN 100V 3A DPAK
MJD32RLG

ON Semiconductor

TRANS PNP 40V 3A DPAK
MJD32C-TP

Micro Commercial Co

TRANS PNP 100V 3A DPAK
MJD340T4

STMicroelectronics

TRANS NPN 300V 0.5A D-PAK

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MJD31C1 Specification

Part Number	Manufacturers	Description	Stock	Price
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(3 Tab) I RoHS: Compliant	75	1 $0.3283 10 $0.2841 100 $0.194 1000 $0.1561 2500 $0.1355 10000 $0.1264 25000 $0.1233 50000 $0.1224
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	TRANS NPN 100V 3A DPAK RoHS: Compliant	7777	1 $0.67 10 $0.574 100 $0.4283 500 $0.3365 1000 $0.26002
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	TRANS NPN 100V 3A DPAK RoHS: Compliant	7777	1 $0.67 10 $0.574 100 $0.4283 500 $0.3365 1000 $0.26002
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	TRANS NPN 100V 3A DPAK RoHS: Compliant	7500	2500 $0.23018 5000 $0.21533 12500 $0.20048 25000 $0.19008
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	TRANS NPN 100V 3A IPAK RoHS: Compliant	825	1 $0.46 75 $0.36867 150 $0.29487 525 $0.2317 1050 $0.17904
MJD31C1 DISTI #MJD31C1	ON Semiconductor	TRANS NPN 100V 3A IPAK RoHS: Not Compliant	0
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(3 Tab) I RoHS: Compliant	3375	3375 $0.1273
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Trans GP BJT NPN 100V 3A Automotive 3-Pin(3 Tab) I RoHS: Compliant	75	46 $0.2841
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) IPAK Rail (A RoHS: Compliant	0
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) IPAK Rail - RoHS: Compliant	0	3375 $0.1309 3525 $0.1299 6900 $0.1279 16875 $0.1259 33750 $0.1229
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) IPAK Rail - RoHS: Compliant	0	1 $0.44 10 $0.363 100 $0.221 500 $0.196 1000 $0.171 2500 $0.146 10000 $0.136
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK T/R - T RoHS: Not Compliant	0	2500 $0.1279 5000 $0.1219 10000 $0.1159 15000 $0.1109 25000 $0.1089
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK T/R (Al RoHS: Compliant	0	5000 $0.18032 10000 $0.17236 15000 $0.16508 25000 $0.16056 50000 $0.15839 125000 $0.15422 250000 $0.15027
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 100V IPAK-4, Transistor	2026	1 $0.44 10 $0.363 100 $0.221 500 $0.196 1000 $0.171 2500 $0.146 10000 $0.136
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	ON Semi MJD31C1G NPN Bipolar Transistor, 3 A, 10 RoHS: Compliant	0	30 $0.44 75 $0.436 150 $0.431 300 $0.399
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	100V NPN High Voltage Transistor TO252 RoHS: Compliant	0	250 $0.28 500 $0.2 1250 $0.18 2500 $0.16
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	MJD31C Series 100 V 3 A 1.5 W NPN High Voltage Tra RoHS: Compliant	10000	99 $0.48 249 $0.42 499 $0.36 999 $0.324 99999 $0.276
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Bipolar Transistors - BJT 3A 100V 15W NPN RoHS: Compliant	1652	1 $0.44 10 $0.363 100 $0.221 1000 $0.171 2500 $0.146 10000 $0.136 25000 $0.129 50000 $0.126
MJD31C1 DISTI #MJD31C1	ON Semiconductor	Bipolar Transistors - BJT 3A 100V 15W NPN RoHS: Not Compliant	0
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated	Bipolar Transistors - BJT 100V 5A NPN SMT RoHS: Compliant	7180	1 $0.59 10 $0.488 100 $0.298 1000 $0.23 2500 $0.196
MJD31C-13 DISTI #MJD31C-13	Zetex / Diodes Inc	100V NPN HIGH VOLTAGE TRANSISTOR TO252, RL	600	500 $0.247 1250 $0.192
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	NPN POWER TRANSISTOR 100V 3A 15W IPAK, TU	2100	15 $0.268
MJD31C-1 DISTI #MJD31C-1	Motorola Semiconductor Products	Bipolar Junction Transistor, NPN Type, TO-252VAR	625
MJD31C-13 DISTI #MJD31C-13	Diodes Incorporated		2800	1 $0.6 168 $0.3 668 $0.24
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Trans GP BJT NPN 100V 3A 1560mW Automotive 3-Pin(3 RoHS: Compliant	75	10 $0.2841
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	Complementary Power Transistors	1	1 $0.27 100 $0.21 500 $0.19 1000 $0.18
MJD31C1G DISTI #MJD31C1G	ON Semiconductor	TRANSISTOR, NPN, 100V, 3A, DPAK RoHS: Compliant	0	1 $0.697 10 $0.575 100 $0.35 1000 $0.271 2500 $0.231 10000 $0.216 25000 $0.204 50000 $0.2
MJD31C1G. DISTI #MJD31C1G.	ON Semiconductor	RoHS: Compliant	2026	1 $0.697 10 $0.575 100 $0.35 1000 $0.271 2500 $0.231 10000 $0.216 25000 $0.204 50000 $0.2

ON Semiconductor MJD31C1

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