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MJD3055G

ON Semiconductor MJD3055G

Part Number:
MJD3055G
Manufacturer:
ON Semiconductor
Ventron No:
2472128-MJD3055G
Description:
TRANS NPN 60V 10A DPAK
ECAD Model:
Datasheet:
MJD3055G

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Specifications
ON Semiconductor MJD3055G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD3055G.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 days ago)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    60V
  • Max Power Dissipation
    1.75W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    10A
  • Frequency
    2MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MJD3055
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.75W
  • Case Connection
    COLLECTOR
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    2MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 4A 4V
  • Current - Collector Cutoff (Max)
    50μA
  • Vce Saturation (Max) @ Ib, Ic
    8V @ 3.3A, 10A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    2MHz
  • Collector Emitter Saturation Voltage
    1.1V
  • Collector Base Voltage (VCBO)
    70V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    20
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
MJD3055G Overview
DC current gain in this device equals 20 @ 4A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 8V @ 3.3A, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 10A current rating.As a result, the part has a transition frequency of 2MHz.In extreme cases, the collector current can be as low as 10A volts.

MJD3055G Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz


MJD3055G Applications
There are a lot of ON Semiconductor
MJD3055G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD3055G More Descriptions
ON Semi MJD3055G NPN Bipolar Transistor, 10 A, 60 V, 3-Pin DPAK | ON Semiconductor MJD3055G
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 60V 10A 1750mW Automotive 3-Pin(2 Tab) DPAK Tube
BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:1.75W; DC Collector Current:10A; DC Current Gain hFE:2; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:20V; Current Ic Continuous a Max:10A; Gain Bandwidth ft Typ:2MHz; Hfe Min:100; Package / Case:D-PAK; Power Dissipation Pd:1.75W; Termination Type:SMD
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Continuous Collector Current, Ic:10A; Collector Emitter Saturation Voltage, Vce(sat):20V; Power Dissipation, Pd:1.75W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MJD3055G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Position
    Polarity
    Configuration
    JEDEC-95 Code
    Max Breakdown Voltage
    Factory Lead Time
    Contact Plating
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    View Compare
  • MJD3055G
    MJD3055G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 2 days ago)
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tube
    2002
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    Other Transistors
    60V
    1.75W
    GULL WING
    260
    10A
    2MHz
    40
    MJD3055
    3
    R-PSSO-G2
    1
    Single
    1.75W
    COLLECTOR
    AMPLIFIER
    2MHz
    NPN
    NPN
    60V
    10A
    20 @ 4A 4V
    50μA
    8V @ 3.3A, 10A
    60V
    2MHz
    1.1V
    70V
    5V
    20
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD361T4-A
    MJD361T4-A
    STMicroelectronics
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - annealed
    Other Transistors
    -
    15W
    GULL WING
    260
    -
    -
    -
    MJD36
    3
    R-PSSO-G2
    1
    -
    15W
    COLLECTOR
    SWITCHING
    -
    -
    PNP
    60V
    3A
    60 @ 1A 4V
    20μA ICBO
    900mV @ 150mA, 3A
    60V
    -
    -
    60V
    5V
    30
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    Surface Mount
    SINGLE
    NPN, PNP
    SINGLE
    TO-252AA
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJD3055G vs MJD361T4-A
  • MJD32CTF
    MJD32CTF
    Fairchild/ON Semiconductor
    LAST SHIPMENTS (Last Updated: 5 days ago)
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3
    260.37mg
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Other Transistors
    -100V
    1.56W
    GULL WING
    -
    -3A
    3MHz
    -
    MJD32
    -
    R-PSSO-G2
    1
    Single
    1.56W
    -
    AMPLIFIER
    3MHz
    PNP
    PNP
    100V
    3A
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    100V
    3MHz
    -1.2V
    -100V
    -5V
    10
    2.3mm
    6.6mm
    6.1mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    Surface Mount
    -
    -
    -
    -
    100V
    6 Weeks
    Tin
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MJD3055G vs MJD32CTF
  • MJD340T4
    MJD340T4
    STMicroelectronics
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300V
    -
    NPN
    D-Pak
    -
    15W
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C (TJ)
    Surface Mount
    -
    30 @ 50mA, 10V
    100µA (ICBO)
    500mA
    MJD3055G vs MJD340T4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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