ON Semiconductor MJD112G

Name: MJD112G
Brand: ON Semiconductor
SKU: 2845866-MJD112G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD112G

Manufacturer:: ON Semiconductor

Ventron No:: 2845866-MJD112G

Description:: TRANS NPN DARL 100V 2A DPAK

ECAD Model:

Datasheet:: MJD112G

Part Pictures

Specifications

ON Semiconductor MJD112G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD112G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD112
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1.75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A 3V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Frequency - Transition
25MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Continuous Collector Current
2A
Height
2.38mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD112G Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 25MHz.The maximum collector current is 2A volts.

MJD112G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112G Applications
There are a lot of ON Semiconductor
MJD112G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD112G More Descriptions

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252-3
Trans Darlington NPN 100V 2A 1750mW Automotive 3-Pin(2 Tab) DPAK Tube
Transistor MJD112 NPN Darlington 2A 100V DPAK package
Transistor, Darlington,Si,NPN,Power, Switch,Vo 100VDC,VI 5VDC,Io 2ADC,PD 20W | ON Semiconductor MJD112G
TRANSISTOR, NPN, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 2A; DC Current Gain hFE: 12000hFE; Transistor Case

Product Comparison

The three parts on the right have similar specifications to MJD112G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

Frequency

Gain Bandwidth Product

Polarity/Channel Type

Max Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Mount

Terminal Finish

View Compare
MJD112G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

100V

1.75W

GULL WING

260

2A

40

MJD112

3

R-PSSO-G2

1

NPN

Single

1.75W

COLLECTOR

SWITCHING

Halogen Free

NPN - Darlington

100V

2A

1000 @ 2A 3V

20μA

3V @ 40mA, 4A

100V

25MHz

2V

25MHz

100V

5V

1000

2A

2.38mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD148T4G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

45V

1.75W

GULL WING

260

4A

40

MJD148

3

R-PSSO-G2

1

-

Single

1.75W

COLLECTOR

AMPLIFIER

-

NPN

45V

4A

85 @ 500mA 1V

20μA ICBO

500mV @ 200mA, 2A

45V

3MHz

500mV

-

45V

5V

40

-

6.35mm

6.35mm

6.35mm

-

No

ROHS3 Compliant

Lead Free

4.535924g

3MHz

3MHz

NPN

45V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MJD112G vs MJD148T4G
MJD117T4

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

3V @ 40mA, 4A

PNP - Darlington

D-Pak

-

20W

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

150°C (TJ)

Surface Mount

25MHz

1000 @ 2A, 3V

20µA

2A

-

-

MJD112G vs MJD117T4
MJD122-1

STMicroelectronics

-

8 Weeks

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

SILICON

150°C TJ

Bulk

-

e3

-

Active

1 (Unlimited)

3

EAR99

Other Transistors

-

20W

-

260

-

30

MJD122

3

R-PSIP-T3

1

NPN

Single

20W

COLLECTOR

SWITCHING

-

NPN - Darlington

100V

8A

1000 @ 4A 4V

10μA

4V @ 80mA, 8A

100V

-

2V

-

100V

5V

100

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

100V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

Tin (Sn)

MJD112G vs MJD122-1

Certification

Related parts for MJD112G

MJD122T4

ON Semiconductor

TRANS NPN DARL 100V 8A DPAK
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MJD112G Specification

Part Number	Manufacturers	Description	Stock	Price
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	4420	75 $0.3491 3000 $0.198 6000 $0.1976 9000 $0.1973
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	2491	1 $0.4299 10 $0.3933 100 $0.2749 1000 $0.2067 2500 $0.1961 10000 $0.1855 25000 $0.1775 50000 $0.1733
MJD112G DISTI #	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK RoHS: Compliant	1565	1 $0.67 75 $0.53173 150 $0.4254 525 $0.33425 1050 $0.25829
NJVMJD112G DISTI #	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK-4 RoHS: Compliant	0	825 $0.3927
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	4575	75 $0.4299
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	2491	37 $0.4299
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	400	11 $0.6655 50 $0.4437 100 $0.3621
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(2 Tab) DPAK Rai RoHS: Compliant	0	2475 $0.2579 2625 $0.2579 5100 $0.2569 12375 $0.2559 24750 $0.2559
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(2 Tab) DPAK Rai RoHS: Compliant	0	75 $1.24425 150 $0.23928 225 $0.23042 375 $0.22219 750 $0.21453 1875 $0.20738 3750 $0.20398
NJVMJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 4A 3-Pin DPAK Rail - Rai RoHS: Compliant	0	1650 $0.2439 1800 $0.2419 3450 $0.2389 8250 $0.2359 16500 $0.2299
MJD112G DISTI #	ON Semiconductor	Bipolar (BJT) Single Transistor, Darlington, NPN,	602	1 $0.696 10 $0.584 100 $0.371 500 $0.333 1000 $0.296 2500 $0.257 10000 $0.242
MJD112G DISTI #	ON Semiconductor	Transistor, Darlington, Si, NPN, Power, Switc RoHS: Compliant	0	1 $0.694 10 $0.688 100 $0.681 1000 $0.674 2500 $0.667
MJD112G DISTI #	ON Semiconductor	RoHS: Not Compliant	109745	1 $0.33 25 $0.3 100 $0.29 500 $0.28 1000 $0.27
MJD112G DISTI #	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant	3415	1 $0.63 10 $0.523 100 $0.319 1000 $0.247 2500 $0.21 10000 $0.196 25000 $0.186
MJD112 DISTI #	ON Semiconductor	Darlington Transistors 2A 100V Bipolar RoHS: Not Compliant	0
NJVMJD112G DISTI #	ON Semiconductor	Darlington Transistors BIP DPAK NPN 2A 100V RoHS: Compliant	1650	1 $0.7 10 $0.58 100 $0.374 1000 $0.3 2500 $0.253 10000 $0.244 25000 $0.234
MJD112G DISTI #	ON Semiconductor	NPN DARLINGTON POWER TRANS. 100V 2A DPAK, PK	1665	15 $0.421 30 $0.342 75 $0.291 150 $0.239 300 $0.227
MJD112G DISTI #	ON Semiconductor	INSTOCK	1609
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	400	1 $1.86 50 $0.348 100 $0.284
MJD112G DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	2491	2475 $0.4299
MJD112G DISTI #	ON Semiconductor	TRANSISTOR, NPN, D-PAK RoHS: Compliant	275	1 $0.997 10 $0.828 100 $0.506 1000 $0.391 2500 $0.332 10000 $0.31 25000 $0.294 50000 $0.287
MJD112G DISTI #		Power Bipolar Transistor,2AI(C),100VV(BR)CEO,1-Ele RoHS: Compliant	471	600 $0.2387
MJD112G DISTI #	ON Semiconductor	TRANSISTOR, NPN, D-PAK RoHS: Compliant	1365	5 $0.456 25 $0.424 100 $0.246 250 $0.218 500 $0.19

ON Semiconductor MJD112G

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