Fairchild/ON Semiconductor KSA1015OBU
- Part Number:
- KSA1015OBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2468364-KSA1015OBU
- Description:
- TRANS PNP 50V 0.15A TO-92
- ECAD Model:
-
- Datasheet:
- KSA1015OBU
Fairchild/ON Semiconductor KSA1015OBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1015OBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max400mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)150mA
- Frequency - Transition80MHz
- RoHS StatusROHS3 Compliant
KSA1015OBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 2mA 6V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSA1015OBU Features
the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92-3
KSA1015OBU Applications
There are a lot of Rochester Electronics, LLC
KSA1015OBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 2mA 6V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSA1015OBU Features
the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92-3
KSA1015OBU Applications
There are a lot of Rochester Electronics, LLC
KSA1015OBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1015OBU More Descriptions
Tube Through Hole PNP Single Bipolar (BJT) Transistor 70 @ 2mA 6V 100nA ICBO 400mW 80MHz
Trans GP BJT PNP 50V 0.15A 3-Pin TO-92 Bulk
Bipolar Transistors - BJT PNP Epitaxial Sil
Compliant Through Hole 70 PNP 80 MHz Lead Free TO-92 -150 mA
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT PNP 50V 0.15A 3-Pin TO-92 Bulk
Bipolar Transistors - BJT PNP Epitaxial Sil
Compliant Through Hole 70 PNP 80 MHz Lead Free TO-92 -150 mA
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to KSA1015OBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeMountNumber of PinsWeightTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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KSA1015OBUThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3150°C TJTubeObsolete1 (Unlimited)400mWPNP70 @ 2mA 6V100nA ICBO300mV @ 10mA, 100mA50V150mA80MHzROHS3 Compliant----------------------------------------- -
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)-150°C TJTape & Box (TB)Active1 (Unlimited)-PNP160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA---ROHS3 CompliantACTIVE (Last Updated: 17 hours ago)6 WeeksThrough Hole3371.1027mgSILICON2013e3yes3EAR99Tin (Sn)Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNP160V1A160V50MHz-1.5V160V-160V-6V608.2mm5.1mm4.1mmNo SVHCNoLead Free
-
Through HoleTO-226-3, TO-92-3 Short Body-150°C TJTape & Box (TB)Obsolete1 (Unlimited)250mWPNP200 @ 1mA 6V100nA ICBO300mV @ 10mA, 100mA50V150mA180MHz-------------------KSA1175---------------------
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Through HoleTO-226-3, TO-92-3 Short Body-150°C TJBulkObsolete1 (Unlimited)300mWPNP300 @ 1mA 6V1μA300mV @ 1mA, 10mA120V50mA100MHz-------------------KSA1174---------------------
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