Fairchild/ON Semiconductor KSA1010Y
- Part Number:
- KSA1010Y
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2468436-KSA1010Y
- Description:
- TRANS PNP 100V 7A TO-220
- ECAD Model:
-
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor KSA1010Y technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1010Y.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal PositionSINGLE
- Reach Compliance Codecompliant
- Base Part NumberKSA1010
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1.5W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 3A 5V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic600mV @ 500mA, 5A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)7A
- Power Dissipation-Max (Abs)40W
- VCEsat-Max0.6 V
- Turn Off Time-Max (toff)2000ns
- Turn On Time-Max (ton)500ns
- Power Dissipation Ambient-Max1.5W
- Fall Time-Max (tf)500ns
KSA1010Y Overview
In this device, the DC current gain is 100 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 500mA, 5A.The device exhibits a collector-emitter breakdown at 100V.
KSA1010Y Features
the DC current gain for this device is 100 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A
KSA1010Y Applications
There are a lot of ON Semiconductor
KSA1010Y applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 3A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 500mA, 5A.The device exhibits a collector-emitter breakdown at 100V.
KSA1010Y Features
the DC current gain for this device is 100 @ 3A 5V
the vce saturation(Max) is 600mV @ 500mA, 5A
KSA1010Y Applications
There are a lot of ON Semiconductor
KSA1010Y applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to KSA1010Y.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal PositionReach Compliance CodeBase Part NumberJESD-30 CodeNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)VCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Power Dissipation Ambient-MaxFall Time-Max (tf)Lifecycle StatusFactory Lead TimeMountNumber of PinsWeightPublishedJESD-609 CodePbfree CodeECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFrequency - TransitionView Compare
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KSA1010YThrough HoleTO-220-3NOSILICON150°C TJTubeObsolete1 (Unlimited)3SINGLEcompliantKSA1010R-PSFM-T31SINGLE1.5WSWITCHINGPNPPNP100 @ 3A 5V10μA ICBOTO-220AB600mV @ 500mA, 5A100V7A40W0.6 V2000ns500ns1.5W500ns------------------------------------ -
Through HoleTO-226-3, TO-92-3 Long Body (Formed Leads)-SILICON150°C TJTape & Box (TB)Active1 (Unlimited)3BOTTOM-KSA1013-1--AMPLIFIERPNPPNP160 @ 200mA 5V1μA ICBO-1.5V @ 50mA, 500mA--------ACTIVE (Last Updated: 17 hours ago)6 WeeksThrough Hole3371.1027mg2013e3yesEAR99Tin (Sn)Other Transistors-160V900mW-1A50MHzSingle900mW50MHz160V1A160V50MHz-1.5V160V-160V-6V608.2mm5.1mm4.1mmNo SVHCNoROHS3 CompliantLead Free-
-
Through HoleTO-225AA, TO-126-3-SILICON150°C TJBulkActive1 (Unlimited)3--KSA1156-1--SWITCHINGPNPPNP100 @ 100mA 5V100μA ICBO-1V @ 10mA, 100mA----5000ns---ACTIVE (Last Updated: 20 hours ago)6 WeeksThrough Hole3761mg-e3yesEAR99Tin (Sn)Other Transistors-400V1W-500mA-Single1W-400V500mA400V--1V--400V-7V30----NoROHS3 CompliantLead Free-
-
Through HoleTO-226-3, TO-92-3 Short Body--150°C TJBulkObsolete1 (Unlimited)---KSA1174---300mW--PNP300 @ 1mA 6V1μA-300mV @ 1mA, 10mA120V50mA----------------------------------------100MHz
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