Microsemi Corporation JANTXV2N6798

Name: JANTXV2N6798
Brand: Microsemi Corporation
SKU: 2491562-JANTXV2N6798
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: JANTXV2N6798

Manufacturer:: Microsemi Corporation

Ventron No:: 2491562-JANTXV2N6798

Description:: MOSFET N-CH

ECAD Model:

Datasheet:: JANTXV2N6798

Specifications

Microsemi Corporation JANTXV2N6798 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N6798.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AF Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/557
Published
1997
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
HIGH RELIABILITY
HTS Code
8541.21.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
MIL-19500
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
800mW Ta 25W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
420m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
5.5A Tc
Gate Charge (Qg) (Max) @ Vgs
42.07nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
5.5A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.42Ohm
DS Breakdown Voltage-Min
200V
RoHS Status
Non-RoHS Compliant

Description

JANTXV2N6798 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

JANTXV2N6798 Features
a continuous drain current (ID) of 5.5A
a 200V drain to source voltage (Vdss)

JANTXV2N6798 Applications
There are a lot of Microsemi Corporation
JANTXV2N6798 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

JANTXV2N6798 More Descriptions

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package, TO-205AF-3Infineon SCT
TRANS MOSFET N-CH 200V 5.5A 3PIN TO-39 - Bulk
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN

Certification