IXYS IXTH20N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTH20N60.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMegaMOS™
- Published2000
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations3
- Resistance350mOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating20A
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs350m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Rise Time43ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)20A
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)80A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXTH20N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
IXTH20N60 Applications
There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXTH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.
IXTH20N60 Applications
There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXTH20N60 More Descriptions
Trans MOSFET N-CH Si 600V 20A 3-Pin(3 Tab) TO-247AD
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation
MOSFET, N, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.35R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4.5V; Case style:TO-247 (SOT-249); Case style, RoHS Compliant: Yes
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation
MOSFET, N, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.35R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4.5V; Case style:TO-247 (SOT-249); Case style, RoHS Compliant: Yes
The three parts on the right have similar specifications to IXTH20N60.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceSubcategoryVoltage - Rated DCTechnologyCurrent RatingPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeJESD-609 CodeECCN CodeTerminal FinishAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusAvalanche Energy Rating (Eas)Drain-source On Resistance-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
-
IXTH20N608 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeMegaMOS™2000yesActiveNot Applicable3350mOhmFET General Purpose Power600VMOSFET (Metal Oxide)20A31300W TcSingleENHANCEMENT MODE300WISOLATEDN-ChannelSWITCHING350m Ω @ 10A, 10V4.5V @ 250μA4500pF @ 25V20A Tc170nC @ 10V43ns10V±20V40 ns70 ns20ATO-247AD20V600V80ANoROHS3 CompliantLead Free-------------
-
-Through HoleThrough HoleTO-247-3-SILICON-55°C~175°C TJTubeTrenchMV™2008yesObsolete1 (Unlimited)33.2MOhmFET General Purpose Power-MOSFET (Metal Oxide)-31550W TcSingleENHANCEMENT MODE550WDRAINN-ChannelSWITCHING3.2m Ω @ 50A, 10V4V @ 250μA9700pF @ 25V280A Tc200nC @ 10V55ns10V±20V37 ns49 ns280A--55V600A-RoHS CompliantLead Freee1EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDNOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1500 mJ---
-
-Through HoleThrough HoleTO-247-3-SILICON-55°C~175°C TJTube-2006yesObsolete1 (Unlimited)35MOhm--MOSFET (Metal Oxide)-31430W TcSingleENHANCEMENT MODE430WDRAINN-ChannelSWITCHING5m Ω @ 25A, 10V4V @ 250μA6800pF @ 25V200A Tc160nC @ 10V57ns10V±20V52 ns54 ns200ATO-247AD-75V540A-RoHS CompliantLead Freee1EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDNOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified750 mJ---
-
-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeMegaMOS™2000yesActive1 (Unlimited)3-FET General Purpose Power-MOSFET (Metal Oxide)-31300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING700m Ω @ 500mA, 10V4.5V @ 250μA4500pF @ 25V14A Tc170nC @ 10V33ns10V±20V32 ns63 ns14ATO-247AD20V800V56A-ROHS3 Compliant-----NOT SPECIFIEDNOT SPECIFIED-Not Qualified-0.7Ohm150ns100ns
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 December 2023
NE556 Dual Bipolar Timer Features, Function, Structure, Working Principle, and Applications
Ⅰ. What is a timer?Ⅱ. Overview of NE556Ⅲ. What are the features of NE556 dual timer?Ⅳ. Pin configuration of NE556 dual timerⅤ. Function of NE556 dual timerⅥ. Structure... -
08 December 2023
AT89C51 Microcontroller Structure, Features, Function, AT89C51 vs AT89C52 and Applications
Ⅰ. What is AT89C51?Ⅱ. Pin configuration of AT89C51 microcontrollerⅢ. Structure of AT89C51 microcontrollerⅣ. What are the features of AT89C51 microcontroller?Ⅴ. Function of AT89C51 microcontrollerⅥ. Block diagram of AT89C51... -
11 December 2023
STM32F030F4P6 32-bit Microcontroller Features, Advantages and disadvantages, Dimension and Applications
Ⅰ. What is STM32F030F4P6?Ⅱ. Symbol, footprint and pin configuration of STM32F030F4P6 microcontrollerⅢ. What are the features of STM32F030F4P6 microcontroller?Ⅳ. Advantages and disadvantages of STM32F030F4P6 microcontrollerⅤ. Technical parameters of... -
11 December 2023
CR2032 vs CR2450: What is the Difference?
Ⅰ. What is a button battery?Ⅱ. CR2032 vs CR2450: OverviewⅢ. CR2032 vs CR2450: Symbol and footprintⅣ. CR2032 vs CR2450: FeaturesⅤ. CR2032 vs CR2450: Technical parametersⅥ. CR2450 vs CR2032:...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.