IXTH20N60

IXYS IXTH20N60

Part Number:
IXTH20N60
Manufacturer:
IXYS
Ventron No:
2851110-IXTH20N60
Description:
MOSFET N-CH 600V 20A TO-247AD
ECAD Model:
Datasheet:
IXTH20N60

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Specifications
IXYS IXTH20N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTH20N60.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MegaMOS™
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • Resistance
    350mOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    20A
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    ISOLATED
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    350m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    170nC @ 10V
  • Rise Time
    43ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    40 ns
  • Turn-Off Delay Time
    70 ns
  • Continuous Drain Current (ID)
    20A
  • JEDEC-95 Code
    TO-247AD
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    80A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXTH20N60 Overview
The maximum input capacitance of this device is 4500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 20A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 80A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

IXTH20N60 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 80A.


IXTH20N60 Applications
There are a lot of IXYS
IXTH20N60 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXTH20N60 More Descriptions
Trans MOSFET N-CH Si 600V 20A 3-Pin(3 Tab) TO-247AD
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation
MOSFET, N, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.35R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4.5V; Case style:TO-247 (SOT-249); Case style, RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IXTH20N60.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Additional Feature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Avalanche Energy Rating (Eas)
    Drain-source On Resistance-Max
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    View Compare
  • IXTH20N60
    IXTH20N60
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MegaMOS™
    2000
    yes
    Active
    Not Applicable
    3
    350mOhm
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    20A
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    ISOLATED
    N-Channel
    SWITCHING
    350m Ω @ 10A, 10V
    4.5V @ 250μA
    4500pF @ 25V
    20A Tc
    170nC @ 10V
    43ns
    10V
    ±20V
    40 ns
    70 ns
    20A
    TO-247AD
    20V
    600V
    80A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXTH280N055T
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMV™
    2008
    yes
    Obsolete
    1 (Unlimited)
    3
    3.2MOhm
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    550W Tc
    Single
    ENHANCEMENT MODE
    550W
    DRAIN
    N-Channel
    SWITCHING
    3.2m Ω @ 50A, 10V
    4V @ 250μA
    9700pF @ 25V
    280A Tc
    200nC @ 10V
    55ns
    10V
    ±20V
    37 ns
    49 ns
    280A
    -
    -
    55V
    600A
    -
    RoHS Compliant
    Lead Free
    e1
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1500 mJ
    -
    -
    -
  • IXTH200N075T
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    2006
    yes
    Obsolete
    1 (Unlimited)
    3
    5MOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    430W Tc
    Single
    ENHANCEMENT MODE
    430W
    DRAIN
    N-Channel
    SWITCHING
    5m Ω @ 25A, 10V
    4V @ 250μA
    6800pF @ 25V
    200A Tc
    160nC @ 10V
    57ns
    10V
    ±20V
    52 ns
    54 ns
    200A
    TO-247AD
    -
    75V
    540A
    -
    RoHS Compliant
    Lead Free
    e1
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    750 mJ
    -
    -
    -
  • IXTH14N80
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MegaMOS™
    2000
    yes
    Active
    1 (Unlimited)
    3
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    N-Channel
    SWITCHING
    700m Ω @ 500mA, 10V
    4.5V @ 250μA
    4500pF @ 25V
    14A Tc
    170nC @ 10V
    33ns
    10V
    ±20V
    32 ns
    63 ns
    14A
    TO-247AD
    20V
    800V
    56A
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Not Qualified
    -
    0.7Ohm
    150ns
    100ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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