IXYS IXTC250N075T

IXTC250N075T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 128A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.Peak drain current is 600A, which is the maximum pulsed drain current.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTC250N075T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 128A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 600A.


IXTC250N075T Applications
There are a lot of IXYS
IXTC250N075T applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies