IXYS IXGQ50N60B4D1
- Part Number:
- IXGQ50N60B4D1
- Manufacturer:
- IXYS
- Ventron No:
- 3072230-IXGQ50N60B4D1
- Description:
- IGBT 600V 100A 300W TO3P
- ECAD Model:
-
- Datasheet:
- IXGQ50N60B4D1
IXYS IXGQ50N60B4D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGQ50N60B4D1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation300W
- Reach Compliance Codeunknown
- Pin Count2
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.8V
- Max Collector Current100A
- Reverse Recovery Time25 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.4V
- Turn On Time76 ns
- Test Condition400V, 36A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 36A
- Turn Off Time-Nom (toff)500 ns
- IGBT TypePT
- Gate Charge110nC
- Current - Collector Pulsed (Icm)230A
- Td (on/off) @ 25°C37ns/330ns
- Switching Energy930μJ (on), 1mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- RoHS StatusRoHS Compliant
IXGQ50N60B4D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGQ50N60B4D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGQ50N60B4D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGQ50N60B4D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGQ50N60B4D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGQ50N60B4D1 More Descriptions
IGBT Transistors PT Trench IGBTs Power Device
IGBT 600V 100A 300W TO3P
IGBT 600V 100A 300W TO3P
The three parts on the right have similar specifications to IXGQ50N60B4D1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryMax Power DissipationReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRoHS StatusFactory Lead TimeNumber of PinsWeightJESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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IXGQ50N60B4D1Through HoleThrough HoleTO-3P-3, SC-65-3SILICON-55°C~150°C TJTube2011Obsolete1 (Unlimited)3LOW CONDUCTION LOSSInsulated Gate BIP Transistors300Wunknown2R-PSFM-T3Not Qualified1Single300WCOLLECTORStandardPOWER CONTROLN-CHANNEL1.8V100A25 ns600V1.4V76 ns400V, 36A, 10 Ω, 15V1.8V @ 15V, 36A500 nsPT110nC230A37ns/330ns930μJ (on), 1mJ (off)20V6.5VRoHS Compliant------------- -
Through HoleThrough HoleTO-3P-3, SC-65-3SILICON-55°C~150°C TJTube2004Active1 (Unlimited)3--400W-2-Not Qualified1Single-COLLECTORStandardPOWER CONTROLN-CHANNEL1.2kV75A40 ns1.2kV-105 ns960V, 35A, 3 Ω, 15V3.3V @ 15V, 35A780 ns-140nC200A40ns/270ns900μJ (on), 3.8mJ (off)--ROHS3 Compliant8 Weeks35.500006ge3yesMatte Tin (Sn)NOT SPECIFIEDNOT SPECIFIEDIXG*35N120400W1200V-
-
Through HoleThrough HoleTO-3P-3, SC-65-3--Tube2010Active1 (Unlimited)------------Standard---400A-300V------------ROHS3 Compliant--5.500006g--------400A
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Through HoleThrough HoleTO-3P-3, SC-65-3SILICON-55°C~150°C TJTube2004Active1 (Unlimited)3-Insulated Gate BIP Transistors190Wunknown2-Not Qualified1Single-COLLECTORStandardPOWER CONTROLN-CHANNEL3.4V40A40 ns1.2kV3.4V43 ns960V, 20A, 10 Ω, 15V3.4V @ 15V, 20A630 nsPT62nC100A20ns/270ns2.1mJ (off)20V5VROHS3 Compliant-35.500006ge3yesPURE TINNOT SPECIFIEDNOT SPECIFIEDIXG*20N120190W1200V-
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